Components — VoltDocs

64components

Sort

Transistors

Transistors
BD140 — -80V -1.5A Medium-Power PNP Bipolar Junction Transistor (TO-126)
STMicroelectronics / onsemi -80V -1.5A medium-power complementary PNP BJT in a TO-126 package, legendary companion to the BD139 in hi-fi audio amplifier driver stages and Class-A headphone amplifiers.
Transistor TypeMedium-Power Complementary PNP BJTCollector Emitter Voltage Vceo-80Vbd140bd140-10
SOT-32 / TO-126 (3-pin through-hole with mounting hole)2026-08-25
Transistors
BSS138 — N-Channel Logic-Level Enhancement Mode MOSFET (SOT-23)
ON Semiconductor / Fairchild low-threshold N-channel logic-level MOSFET in SOT-23 package, widely used in bidirectional 3.3V to 5V I2C logic level shifter breakout boards.
Transistor TypeN-Channel Logic-Level MOSFETDrain Source Voltage Vdss50Vbss138mosfet
SOT-23 (3-pin SMD)2026-08-09
Transistors
C945 (2SC945) — 50V 150mA General-Purpose NPN Audio/Switching BJT (TO-92)
NEC / Toshiba / onsemi 50V 150mA general-purpose NPN BJT in a TO-92 package, the ubiquitous Asian hobbyist workhorse transistor found in imported electronics kits, power supplies, and audio preamps.
Transistor TypeGeneral-Purpose Audio/Switching NPN BJTCollector Emitter Voltage Vceo50Vc9452sc945
TO-92 (3-pin through-hole) / SOT-232026-08-25
Transistors
D882 (2SD882) — 30V 3A Low-Saturation Medium-Power NPN BJT (TO-126)
NEC / Toshiba / UTC 30V 3A medium-power NPN BJT in a TO-126 package with exceptionally low 0.3V VCE(sat) saturation voltage, widely used in Asian audio amplifier kits, power inverters, and motor drivers.
Transistor TypeMedium-Power Low-Saturation NPN BJTCollector Emitter Voltage Vceo30Vd8822sd882
SOT-32 / TO-126 (3-pin through-hole with mounting hole) / SOT-892026-08-25
Transistors
DMG2305UX — -20V -4.2A Ultra-Low On-Resistance P-Channel MOSFET (SOT-23)
Diodes Incorporated -20V -4.2A ultra-low on-resistance (41mΩ) P-channel logic-level MOSFET in a SOT-23 package, with sub-1.8V gate drive capability for Li-ion battery high-side load switching.
Transistor TypeP-Channel Sub-1.8V Logic-Level MOSFETDrain Source Voltage Vdss-20Vdmg2305uxdmg2305
SOT-23 (3-pin SMD)2026-08-25
Transistors
FQP27P06 — -60V -27A P-Channel QFET Power MOSFET (TO-220)
onsemi / Fairchild -60V -27A P-channel QFET power MOSFET in a TO-220 package with 70mΩ RDS(on) and 120W power dissipation, popular for 12V/24V high-side load switching and discrete H-bridge motor inverters.
Transistor TypeP-Channel QFET Power MOSFETDrain Source Voltage Vdss-60Vfqp27p06mosfet
TO-220AB (3-pin through-hole)2026-08-25
Transistors
FQP30N06L — 60V 32A Logic-Level N-Channel Power MOSFET (TO-220)
onsemi / Fairchild 60V 32A N-channel logic-level QFET power MOSFET in a TO-220 package with low 35mΩ on-resistance, designed for direct 3.3V and 5V microcontroller gate drive in motor controls and power switching.
Transistor TypeN-Channel Logic-Level Power MOSFET (QFET)Drain Source Voltage Vdss60Vfqp30n06lmosfet
TO-220-3 (TO-220AB)2026-08-25
Transistors
IRF3205 — 55V 110A Ultra-Low Rds(on) (8.0mΩ) N-Channel Power MOSFET (TO-220)
Infineon (International Rectifier) heavy-duty 55V 110A N-channel HEXFET power MOSFET with ultra-low 8.0mΩ on-resistance in a TO-220 package, widely used in high-power DC-AC inverters and motor controllers.
Transistor TypeHigh-Current N-Channel Power MOSFETDrain Source Voltage Vdss55Virf3205irf3205pbf
TO-220AB (3-pin through-hole) / D2PAK / TO-2622026-08-25
Transistors
IRF540N — N-Channel Power HEXFET MOSFET
Infineon (International Rectifier) 100V, 33A N-channel power HEXFET MOSFET in TO-220AB package featuring ultra-low 44mΩ on-resistance for high-power DC motor control, solenoids, and power switching.
Transistor TypeN-Channel Power MOSFETDrain Source Voltage Vdss100Virf540nirf540
TO-220AB2026-08-09
Transistors
IRF9540 — -100V -23A P-Channel HEXFET Power MOSFET (TO-220)
Infineon / International Rectifier -100V -23A P-channel HEXFET power MOSFET in a TO-220 package, legendary complementary partner to the IRF540N for discrete audio amplifiers and H-bridge motor drives.
Transistor TypeP-Channel HEXFET Power MOSFETDrain Source Voltage Vdss-100Virf9540irf9540n
TO-220AB (3-pin through-hole)2026-08-25
Transistors
IRFB4110 — 100V 180A Extreme-Current Ultra-Low Rds(on) (3.7mΩ) N-Channel Power MOSFET (TO-220)
Infineon (International Rectifier) extreme-power 100V 180A N-channel HEXFET power MOSFET with benchmark 3.7mΩ on-resistance in a TO-220 package, legendary for battery spot welders, 72V e-bike ESCs, and induction heaters.
Transistor TypeUltra-High-Power N-Channel MOSFETDrain Source Voltage Vdss100Virfb4110irfb4110pbf
TO-220AB (3-pin through-hole) / D2PAK2026-08-25
Transistors
IRFP250N — 200V 30A High-Power N-Channel MOSFET (TO-247AC)
Infineon (International Rectifier) 200V 30A high-power N-channel HEXFET power MOSFET in a heavy-duty TO-247AC package, celebrated in high-end Nelson Pass Class-A audio amplifiers and ZVS induction heaters.
Transistor TypeHigh-Power N-Channel HEXFET MOSFETDrain Source Voltage Vdss200Virfp250nirfp250npbf
TO-247AC (3-pin heavy-duty through-hole)2026-08-25
Transistors
IRFZ44N — N-Channel Power MOSFET (55V, 49A)
Infineon / IR TO-220 N-channel power MOSFET rated for 55V VDS, 49A continuous drain current, and ultra-low 17.5mΩ RDS(on) at 10V VGS for DC motor controllers and solar switches.
Transistor TypeN-Channel Power MOSFETDrain Source Voltage Vdss55Virfz44nmosfet
TO-220AB2026-08-03
Transistors
IRL540N — 100V 36A Logic-Level N-Channel Power MOSFET (TO-220)
Infineon / International Rectifier 100V 36A N-channel logic-level HEXFET power MOSFET in a TO-220AB package, providing low on-resistance (56mΩ at 5V VGS) for direct microcontroller switching of higher-voltage DC loads up to 100V.
Transistor TypeN-Channel Logic-Level Power MOSFET (HEXFET)Drain Source Voltage Vdss100Virl540nirl540npbf
TO-220AB2026-08-25
Transistors
IRLB8721 — 30V 62A Ultra-Low RDS(on) Logic-Level N-Channel MOSFET (TO-220)
Infineon / International Rectifier 30V 62A N-channel logic-level power MOSFET in a TO-220AB package featuring ultra-low 8.7mΩ on-resistance and low gate charge (8.4nC), standard in 3D printer heated beds, motor drivers, and 3.3V/5V MCU load switching.
Transistor TypeN-Channel Logic-Level Power MOSFETDrain Source Voltage Vdss30Virlb8721irlb8721pbf
TO-220AB2026-08-25
Transistors
IRLB8743 — 30V 150A Extreme Low RDS(on) Logic-Level N-Channel MOSFET (TO-220)
Infineon / International Rectifier 30V 150A N-channel logic-level power MOSFET in a TO-220AB package featuring exceptional 3.2mΩ on-resistance (4.2mΩ at 4.5V VGS), ideal for extreme current heated beds, high-power DC motor drivers, and high-efficiency synchronous switching.
Transistor TypeN-Channel Logic-Level Power MOSFETDrain Source Voltage Vdss30Virlb8743irlb8743pbf
TO-220AB2026-08-25
Transistors
IRLML2502 — N-Channel 20V Logic-Level Power MOSFET (SOT-23)
Infineon (International Rectifier) 20V 4.2A N-channel logic-level HEXFET power MOSFET in a compact SOT-23 package, with ultra-low 45mΩ on-resistance at 4.5V VGS for high-efficiency battery load switching and motor control.
Transistor TypeN-Channel Logic-Level Enhancement Mode MOSFETDrain Source Voltage Vdss20Virlml2502irlml2502trpbf
SOT-23 (Micro3 / TO-236AB)2026-08-23
Transistors
IRLML6344 — 30V 5A Ultra-Low Rds(on) (22mΩ) N-Channel Logic-Level MOSFET (SOT-23)
Infineon (International Rectifier) 30V 5A N-channel logic-level power MOSFET featuring ultra-low 22mΩ on-resistance and sub-1V gate threshold for direct 1.8V/3.3V switching in a compact SOT-23 package.
Transistor TypeN-Channel Logic-Level Power MOSFETDrain Source Voltage Vdss30Virlml6344irlml6344trpbf
SOT-23-3 (Micro3)2026-08-25
Transistors
IRLZ44N — Logic-Level N-Channel Power MOSFET (55V, 47A)
Infineon / IR TO-220 logic-level N-channel power MOSFET with ultra-low VGS(th) (1.0V to 2.0V) allowing full 55V/47A switching directly from 3.3V and 5V microcontroller GPIO pins.
Transistor TypeN-Channel MOSFET (Logic-Level)Drain Source Voltage Vdss55Virlz44nmosfet
TO-220AB2026-08-03
Transistors
J201 — Ultra-Low-Noise Small-Signal N-Channel JFET (Audio / Guitar Preamp)
Ultra-low-noise small-signal N-channel depletion-mode JFET in a TO-92 / SOT-23 package, celebrated for vacuum-tube emulation in guitar overdrive pedals, high-impedance audio buffers, and microphone capsules.
Transistor TypeN-Channel Depletion-Mode Junction Field-Effect Transistor (JFET)Drain Source Voltage Vds Max40Vj201mmbfj201
TO-92 (through-hole) / SOT-23 (MMBFJ201)2026-08-25
Transistors
KSP2222A — 40V 600mA High-Current NPN BJT (Modern TO-92 2N2222A)
onsemi / Fairchild modern commercial catalog TO-92 package equivalent of the classic 2N2222A high-speed high-current NPN switching transistor (40V, 600mA, 300MHz).
Transistor TypeHigh-Current General-Purpose NPN BJTCollector Emitter Voltage Vceo40Vksp2222aksp2222
TO-92 (3-pin through-hole)2026-08-25
Transistors
MJE2955T — -60V -10A Power PNP BJT (Plastic TO-220 2N2955 Equivalent)
onsemi / STMicroelectronics -60V -10A 75W silicon power PNP BJT in a TO-220 package, serving as the modern plastic through-hole equivalent of the legendary metal-can MJ2955/2N2955 and complement to MJE3055T.
Transistor TypeSilicon Power PNP BJTCollector Emitter Voltage Vceo-60Vmje2955tmje2955
TO-220AB (3-pin through-hole)2026-08-25
Transistors
MJE3055T — 60V 10A Power NPN BJT (Plastic TO-220 2N3055 Equivalent)
onsemi / STMicroelectronics 60V 10A 75W silicon power NPN BJT in a TO-220 package, serving as the modern plastic through-hole equivalent of the legendary metal-can 2N3055.
Transistor TypeSilicon Power NPN BJTCollector Emitter Voltage Vceo60Vmje3055tmje3055
TO-220AB (3-pin through-hole)2026-08-25
Transistors
MPSA42 — 300V 500mA Ultra-High-Voltage NPN BJT (Nixie Tube Driver, TO-92)
onsemi / Fairchild 300V 500mA ultra-high-voltage NPN bipolar junction transistor in a TO-92 package, celebrated as the premier discrete driver transistor for 170V Nixie tube clocks and neon lamps.
Transistor TypeUltra-High-Voltage Small-Signal NPN BJTCollector Emitter Voltage Vceo300Vmpsa42mmbta42
TO-92 Plastic (through-hole) / SOT-23 (MMBTA42) / SOT-223 (PZTA42)2026-08-25

Showing 25–48 of 64 matching · 238 in the libraryPage 2 of 3