FQP27P06 — -60V -27A P-Channel QFET Power MOSFET (TO-220)

Overview

The FQP27P06 is a -60V -27A P-channel enhancement mode power MOSFET manufactured by onsemi (originally Fairchild Semiconductor). Built using proprietary planar stripe QFET DMOS technology and housed in an industry-standard TO-220AB through-hole package, it delivers low on-state resistance and superior switching performance.

Featuring a drain-source breakdown voltage ( $V_{DSS}$ ) of $-60\text{V}$ , a continuous drain current rating of $-27\text{A}$ ( $-108\text{A}$ pulsed), an on-resistance of $70\text{ m}\Omega$ at $V_{GS} = -10\text{V}$ , and a maximum power dissipation of $120\text{ Watts}$ at $T_C = 25^\circ\text{C}$ ( $\theta_{JC} = 1.04^\circ\text{C/W}$ ), the FQP27P06 is the standard high-current P-channel companion to the popular FQP30N06L. It is widely employed in $12\text{V}/24\text{V}$ automotive high-side load switching, discrete full-bridge DC motor drivers, high-power audio amplifier power stages, solar charge controllers, and battery disconnect circuits.

Quick reference


Transistor Type	P-Channel QFET Power MOSFET
Package	TO-220AB (3-pin through-hole)
Drain-Source Breakdown Voltage ( $V_{DSS}$ )	$-60\text{ V}$ max
Gate-Source Voltage ( $V_{GSS}$ )	$\pm 25\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$-27.0\text{ A}$ ( $T_C = 25^\circ\text{C}$ ) / $-19.1\text{ A}$ ( $T_C = 100^\circ\text{C}$ )
Pulsed Drain Current ( $I_{DM}$ )	$-108\text{ A}$
On-Resistance ( $R_{DS(on)}$ at $-10\text{V}$ )	$70\text{ m}\Omega$ max ( $55\text{ m}\Omega$ typ) at $I_D = -13.5\text{A}$
Gate Threshold Voltage ( $V_{GS(th)}$ )	$-2.0\text{ V}$ to $-4.0\text{ V}$ ( $V_{GS} = -10\text{V}$ recommended for full saturation)
Total Power Dissipation ( $P_D$ )	$120\text{ Watts}$ ( $T_C = 25^\circ\text{C}$ with heatsink)
Operating Junction Temperature	$-55^\circ\text{C}$ to $+175^\circ\text{C}$
Complementary N-Channel Pair	FQP30N06 / FQP30N06L

Pinout (TO-220AB Package - G-D-S Standard)

Looking at the front labeled face with leads pointing downward:

text

        ┌──────────────┐
        │  O  [Metal]  │ ── Tab is internally connected to Pin 2 (Drain)
        ├──────────────┤
        │   FQP27P06   │
        └─┬────┬────┬──┘
          1    2    3
          G    D    S

Pin	Name	Type	Description
1	`GATE (G)`	Control Input	Gate control terminal (Pull LOW relative to Source to turn ON)
2 (Tab)	`DRAIN (D)`	Power Terminal	Drain output (Connected to switched load; internally bonded to tab)
3	`SOURCE (S)`	Power Terminal	Source input (Connected to positive supply rail, e.g. $+12\text{V} \dots +24\text{V}$ )

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown	$V_{(BR)DSS}$	-60	—	—	V	$I_D = -250\ \mu\text{A}, V_{GS} = 0\text{V}$
Gate Threshold Voltage	$V_{GS(th)}$	-2.0	-2.9	-4.0	V	$V_{DS} = V_{GS}, I_D = -250\ \mu\text{A}$
Zero Gate Voltage Drain Current	$I_{DSS}$	—	—	-1.0	µA	$V_{DS} = -60\text{V}, V_{GS} = 0\text{V}$
Gate-Body Leakage Current	$I_{GSS}$	—	—	$\pm 100$	nA	$V_{GS} = \pm 25\text{V}, V_{DS} = 0\text{V}$
Static Drain-Source On-Resistance	$R_{DS(on)}$	—	55	70	mΩ	$V_{GS} = -10\text{V}, I_D = -13.5\text{A}$
Forward Transconductance	$g_{FS}$	10	15	—	S	$V_{DS} = -30\text{V}, I_D = -13.5\text{A}$
Total Gate Charge	$Q_g$	—	33	43	nC	$V_{GS} = -10\text{V}, V_{DS} = -48\text{V}, I_D = -27\text{A}$
Input Capacitance	$C_{iss}$	—	1100	1400	pF	$V_{DS} = -25\text{V}, f = 1.0\text{MHz}$

Typical Application Circuit: 12V / 24V High-Side Power Switch with NPN Driver

In high-side load switching, a small NPN transistor (e.g. 2N3904) pulls the P-channel gate LOW to turn the load ON:

text

  +12V to +24V DC Main Supply ────────────────────┬─────────► [Pin 3: SOURCE]
                                                  │              FQP27P06
                                           [ 10kΩ Pull-Up ]      [Pin 2: DRAIN] ───► [ + 10A DC Motor / Load - ]
                                                  │                 │                      │
                                                  ├─────────► [Pin 1: GATE]                │
                                                  │                                        │
                                            [ COLLECTOR ]                                  │
  MCU GPIO (3.3V / 5V) ───[ 1kΩ Resistor ]──► Base of 2N3904                               │
                                            [ EMITTER ]                                    │
                                                  │                                        │
  System Ground (0V) ─────────────────────────────┴────────────────────────────────────────┴── Common Ground Return

Comparison: FQP27P06 vs IRF9540N

Parameter	FQP27P06	IRF9540N
$V_{DSS}$ Voltage	$-60\text{ V}$	$-100\text{ V}$
Current ( $I_D$ )	$-27\text{ A}$	$-23\text{ A}$
On-Resistance ( $R_{DS(on)}$ )	$70\text{ m}\Omega$ (Lower Loss)	$117\text{ m}\Omega$
Power Dissipation ( $P_D$ )	$120\text{ W}$	$140\text{ W}$
Optimal System Voltage	$12\text{V} \dots 24\text{V}$ Systems	$36\text{V} \dots 48\text{V}$ Systems

Common mistakes

Attempting to drive directly from a 3.3V/5V microcontroller pin on a 12V/24V supply: A P-channel MOSFET turns OFF only when its Gate voltage equals its Source voltage ( $V_{GS} = 0\text{V}$ ). If Source is at $+12\text{V}$ and an MCU pin outputs $+5\text{V}$ , $V_{GS} = -7\text{V}$ , leaving the transistor fully ON! An intermediate NPN transistor or open-drain buffer is required for level translation.

Notes

Suffix Guide: FQP27P06 is standard through-hole TO-220AB; FQI27P06 is I2PAK; FQB27P06 is D2PAK surface-mount.

Interface	Standard High-Side Gate Drive (-10V to -20V Recommended)
Package	TO-220AB (3-pin through-hole)