IRFP250N — 200V 30A High-Power N-Channel MOSFET (TO-247AC)

Overview

The IRFP250N (IRFP250NPBF) is a high-power $200\text{V}$ $30\text{A}$ N-channel HEXFET power MOSFET manufactured by Infineon Technologies (originally International Rectifier). Housed in an oversized heavy-duty TO-247AC through-hole package with low thermal resistance ( $\theta_{JC} = 0.70^\circ\text{C/W}$ ), it is engineered for power-hungry linear and high-voltage switching applications.

Boasting a drain-to-source breakdown rating of $200\text{V}$ , continuous current handling of $30\text{A}$ at $25^\circ\text{C}$ , a power dissipation capability of $214\text{ Watts}$ , and a maximum on-resistance of $75\text{ m}\Omega$ ( $0.075\ \Omega$ ), the IRFP250N is famous in the audiophile and high-voltage hobby communities. It is the core active transistor in Nelson Pass Class-A audio amplifiers (Pass Zen, Pass Aleph 30/60), resonant ZVS induction heaters (Mazzilli oscillators), solid-state Tesla coils (SSTC), and DC electronic load banks.

Quick reference


Transistor Type	High-Power N-Channel HEXFET MOSFET
Package	TO-247AC (3-pin through-hole)
Drain-Source Voltage ( $V_{DSS}$ )	$200\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$30\text{ A}$ at $T_C = 25^\circ\text{C}$ ( $21\text{ A}$ at $100^\circ\text{C}$ )
Pulsed Drain Current ( $I_{DM}$ )	$120\text{ A}$
On-Resistance ( $R_{DS(on)}$ at 10V)	$75\text{ m}\Omega$ ( $0.075\ \Omega$ ) max
Gate Threshold Voltage ( $V_{GS(th)}$ )	$2.0\text{ V}$ to $4.0\text{ V}$ (Standard $10\text{V} \dots 15\text{V}$ gate drive)
Total Power Dissipation ( $P_D$ )	$214\text{ Watts}$ ( $T_C = 25^\circ\text{C}$ )
Thermal Resistance ( $\theta_{JC}$ )	$0.70^\circ\text{C/W}$ (Junction-to-Case)
Operating Junction Temp	$-55^\circ\text{C}$ to $+175^\circ\text{C}$

Pinout (TO-247AC Package)

Looking at the front labeled face with leads pointing downward:

text

        ┌──────────────────┐
        │   O   [Metal]    │ ── Tab is internally connected to Pin 2 (Drain)
        ├──────────────────┤
        │     IRFP250N     │
        │     TO-247AC     │
        └─┬──────┬──────┬──┘
          1      2      3
          G      D      S

Pin	Name	Type	Description
1	`GATE`	Gate Input	Gate control terminal (Drive with $10\text{V} \dots 15\text{V}$ for full saturation)
2 (Tab)	`DRAIN`	Power Drain	Drain switching terminal (Internally connected to heavy metal mounting tab)
3	`SOURCE`	Power Source	Source terminal (Connect to ground, source resistor, or negative rail)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown	$V_{(BR)DSS}$	200	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Static Drain-Source $R_{DS(on)}$	$R_{DS(on)}$	—	—	0.075	Ω	$V_{GS} = 10\text{V}, I_D = 18\text{A}$
Gate Threshold Voltage	$V_{GS(th)}$	2.0	—	4.0	V	$V_{DS} = V_{GS}, I_D = 250\ \mu\text{A}$
Total Gate Charge	$Q_g$	—	82	123	nC	$V_{DS} = 160\text{V}, V_{GS} = 10\text{V}, I_D = 18\text{A}$
Input Capacitance	$C_{iss}$	—	2159	—	pF	$V_{DS} = 25\text{V}, f = 1.0\text{ MHz}$
Thermal Resistance	$R_{\theta JC}$	—	—	0.70	°C/W	Junction-to-Case

Typical Application: Nelson Pass "Zen" Class-A Single-Ended Amplifier

text

                       +35V to +45V Regulated Linear DC Supply
                                          │
                                 [ R_L: 8Ω 50W Power Resistor / Choke ]
                                          │
                                          ├───[ C_OUT: 2200µF 50V Audio Cap ]───► To Speaker
                                          │
                                   [Pin 2: DRAIN]
                                      IRFP250N
  Audio Input (via Preamp)         [Pin 1: GATE]
           │                              │
           ├───[ 1µF Poly Cap ]───────────┤
           │                              ├───[ 100kΩ Gate Bias Potentiometer (to +V)]
          GND                             │
                                   [Pin 3: SOURCE]
                                          │
                                          ├───[ R_S: 0.47Ω 10W Non-Inductive Resistor ]──┐
                                          │                                              │
                                         GND ────────────────────────────────────────────┴─── Common GND

Common mistakes

Inadequate heatsink sizing in linear audio modes: In Class-A amplifiers or electronic loads, the MOSFET operates continuously in its active linear region dissipating $50\text{W} \dots 100\text{W}$ of heat per transistor. A large extruded aluminum heatsink with thermal resistance $\le 0.5^\circ\text{C/W}$ (or active fan cooling) is mandatory.
Neglecting gate damping in high-frequency ZVS oscillators: High input capacitance ( $C_{iss} \approx 2160\text{ pF}$ ) can interact with stray lead inductance to trigger parasitic megahertz oscillations. Always place a $10\ \Omega \dots 47\ \Omega$ carbon film resistor directly against Pin 1 (Gate).

Notes

Package Advantage: TO-247 package has more than twice the thermal interface surface area of TO-220, drastically reducing case-to-heatsink thermal bottlenecking.

Interface	3-Terminal TO-247 (Gate, Drain, Source)
Package	TO-247AC (3-pin heavy-duty through-hole)