IRL540N — 100V 36A Logic-Level N-Channel Power MOSFET (TO-220)

Overview

The IRL540N (IRL540NPBF) is a 100V, 36A N-channel logic-level HEXFET power MOSFET manufactured by Infineon Technologies (formerly International Rectifier) in a through-hole TO-220AB package. It serves as the logic-level gate counterpart to the classic IRF540N.

While standard-gate MOSFETs like the IRF540N require a full $10\text{V}$ gate voltage ( $V_{GS}$ ) to saturate, the IRL540N features a tailored low gate threshold voltage ( $V_{GS(th)} = 1.0\text{V} \dots 2.0\text{V}$ ). It achieves an on-resistance of $56\text{ m}\Omega$ at $V_{GS} = 5.0\text{V}$ and $77\text{ m}\Omega$ at $V_{GS} = 4.0\text{V}$ , making it the premier choice when high breakdown voltage ( $100\text{V}$ ) is needed to switch $24\text{V}$ , $36\text{V}$ , or $48\text{V}$ DC industrial loads, high-power solenoid valves, and e-bike accessories directly from $3.3\text{V}$ and $5.0\text{V}$ microcontroller pins.

Quick reference


Transistor Type	N-Channel Logic-Level Enhancement Mode MOSFET (HEXFET)
Package	TO-220AB (Pin 1: Gate, Pin 2: Drain/Tab, Pin 3: Source)
Drain-Source Voltage ( $V_{DSS}$ )	$100\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$36\text{ A}$ at $T_C = 25^\circ\text{C}$ ( $25\text{ A}$ at $100^\circ\text{C}$ )
Gate Threshold Voltage ( $V_{GS(th)}$ )	$1.0\text{ V}$ min to $2.0\text{ V}$ max
On-Resistance ( $R_{DS(on)}$ )	$44\text{ m}\Omega$ at $10\text{V}$ / $56\text{ m}\Omega$ at $5\text{V}$ / $77\text{ m}\Omega$ at $4\text{V}$
Pulsed Drain Current ( $I_{DM}$ )	$140\text{ A}$
Total Power Dissipation ( $P_D$ )	$140\text{ W}$ ( $T_C = 25^\circ\text{C}$ )

Terminal identification

text

        ┌─────────┐
        │  TO-220 │
        │ IRL540N │
        └─┬───┬───┬─┘
          1   2   3
          G   D   S

Pin	Terminal	Description
1	`Gate` (`G`)	Gate control input (Connect to MCU GPIO via $220\ \Omega$ series resistor)
2 / Tab	`Drain` (`D`)	High-voltage load switching terminal / Tab (Connect to load negative return)
3	`Source` (`S`)	Source terminal (Connect to Common System Ground 0 V)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown Voltage	$V_{(BR)DSS}$	100	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Gate Threshold Voltage	$V_{GS(th)}$	1.0	—	2.0	V	$V_{DS} = V_{GS}, I_D = 250\ \mu\text{A}$
On-Resistance ( $V_{GS} = 10\text{V}$ )	$R_{DS(on)}$	—	—	44	mΩ	$V_{GS} = 10\text{V}, I_D = 18\text{A}$
On-Resistance ( $V_{GS} = 5.0\text{V}$ )	$R_{DS(on)}$	—	—	56	mΩ	$V_{GS} = 5.0\text{V}, I_D = 18\text{A}$
On-Resistance ( $V_{GS} = 4.0\text{V}$ )	$R_{DS(on)}$	—	—	77	mΩ	$V_{GS} = 4.0\text{V}, I_D = 15\text{A}$
Total Gate Charge	$Q_g$	—	48	74	nC	$I_D = 18\text{A}, V_{DS} = 80\text{V}, V_{GS} = 5.0\text{V}$
Turn-On Delay Time	$t_{d(on)}$	—	11	—	ns	$V_{DD} = 50\text{V}, I_D = 18\text{A}, R_G = 5.1\ \Omega$
Turn-Off Delay Time	$t_{d(off)}$	—	44	—	ns	$V_{DD} = 50\text{V}, I_D = 18\text{A}, R_G = 5.1\ \Omega$

Typical circuits

High-Voltage (24V–48V) Load Switch Circuit

text

        +24V / +36V / +48V Power Supply
           │
         [ High-Voltage DC Motor / Heavy Solenoid / Actuator ]
           │
           ├─── [ Flyback Diode (e.g. 1N5408 / UF4007) ]
           │
        [Pin 2: DRAIN]
         IRL540N
        [Pin 3: SOURCE] ─── GND (Common System Ground)
           │
        [Pin 1: GATE] ◄───[ R_gate = 220Ω ]───◄ MCU GPIO / PWM (3.3V or 5V)
           │
        [ R_pulldown = 100kΩ ]
           │
          GND

Selection & substitutes

Part Number	$V_{DSS}$	$I_D$	$R_{DS(on)}$ at 5V	Target Applications
IRL540N	$100\text{ V}$	$36\text{ A}$	$56\text{ m}\Omega$	High voltage (24V–48V) logic-level switching
IRLZ44N	$55\text{ V}$	$47\text{ A}$	$22\text{ m}\Omega$	Medium voltage (12V–24V), lower on-resistance
IRF540N	$100\text{ V}$	$33\text{ A}$	$44\text{ m}\Omega$ (at 10V)	Standard gate; requires 10V gate drive

Common mistakes

Substituting an IRF540N for an IRL540N: The "F" version requires $10\text{V}$ on the gate. When driven directly by a $3.3\text{V}$ or $5\text{V}$ MCU, an IRF540N does not fully turn on, acting as a high-resistance heater under heavy loads.
Forgetting a high-voltage flyback diode on 24V/48V inductive loads: High voltage back-EMF from large inductive coils will easily spike past the $100\text{V}$ breakdown rating ( $V_{DSS}$ ) if not clamped with an appropriate fast-recovery diode (such as UF4007).

Notes

IRL540N vs IRF540N: "L" denotes Logic-Level gate ( $V_{GS(th)} = 1.0\text{--}2.0\text{V}$ ); "F" denotes standard 10V gate threshold.

Interface	3.3V, 4V, and 5V Logic-Level Gate Drive Compatible
Package	TO-220AB