IRFZ44N — N-Channel Power MOSFET (55V, 49A)

Overview

The IRFZ44N is a widely used high-power N-channel Enhancement Mode Power MOSFET IC manufactured by Infineon (formerly International Rectifier). Encapsulated in a heavy-duty TO-220AB package, it is a mainstay in high-current DC motor controllers, H-bridge motor drivers, solar battery charge controllers, automotive power switches, and DC-to-DC converters.

Rated for a drain-source voltage ( $V_{DSS}$ ) of $55\text{ Volts}$ and continuous drain current ( $I_D$ ) of $49\text{ Amperes}$ at $25^\circ\text{C}$ , the IRFZ44N achieves an ultra-low turn-on resistance ( $R_{DS(on)}$ ) of $17.5\ \text{m}\Omega$ when driven with a standard $10\text{V}$ gate-source voltage ( $V_{GS}$ ).

Quick reference


Transistor Type	N-Channel Enhancement Mode Power MOSFET
Package	TO-220AB (Metal Tab connected internally to Drain)
Drain-Source Voltage ( $V_{DSS}$ )	$55\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$49\text{ A}$ at $T_C = 25^\circ\text{C}$ ( $35\text{ A}$ at $T_C = 100^\circ\text{C}$ )
Pulsed Drain Current ( $I_{DM}$ )	$160\text{ A}$ peak pulse current
Gate Threshold Voltage ( $V_{GS(th)}$ )	$2.0\text{ V}$ min to $4.0\text{ V}$ max
On-State Resistance ( $R_{DS(on)}$ )	$17.5\ \text{m}\Omega$ max at $V_{GS} = 10\text{V}, I_D = 25\text{A}$
Total Gate Charge ( $Q_g$ )	$63\text{ nC}$ max at $V_{GS} = 10\text{V}$
Power Dissipation ( $P_D$ )	$94\text{ W}$ at $T_C = 25^\circ\text{C}$

Pinout (TO-220AB Package)

Looking at the front labeled face of the TO-220 package with metal tab at top and leads pointing down:

text

        ┌───────────────┐
        │ [IRFZ44N Tab] │  (Metal Tab connected internally to Pin 2 DRAIN)
        ├───────────────┤
        │    IRFZ44N    │  (Front Package Face)
        └─┬────┬────┬───┘
          1    2    3
          G    D    S

Pin	Name	Description
1	`GATE` (`G`)	Gate control terminal
2	`DRAIN` (`D`) / `TAB`	Drain terminal (Low-side load connection, connected to metal tab)
3	`SOURCE` (`S`)	Source terminal (Ground reference 0 V)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown Volts	$V_{(BR)DSS}$	55	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Gate Threshold Voltage	$V_{GS(th)}$	2.0	—	4.0	V	$V_{DS} = V_{GS}, I_D = 250\ \mu\text{A}$
Drain-Source Leakage	$I_{DSS}$	—	—	25	µA	$V_{DS} = 55\text{V}, V_{GS} = 0\text{V}$
Gate-Source Forward Leakage	$I_{GSS}$	—	—	100	nA	$V_{GS} = 20\text{V}$
Thermal Resistance (Junction-to-Case)	$R_{\theta JC}$	—	—	1.5	°C/W	$T_C = 25^\circ\text{C}$

Standard Low-Side MOSFET Switching Circuit