IRF540N — N-Channel Power HEXFET MOSFET

Overview

The IRF540N is an advanced N-channel power HEXFET MOSFET manufactured by Infineon Technologies (formerly International Rectifier). Packaged in a heavy-duty TO-220AB package, it utilizes advanced processing technology to achieve extremely low on-resistance per silicon area.

Capable of withstanding drain-source voltages up to $100\text{ Volts}$ and carrying continuous drain currents up to $33\text{ Amps}$ (with pulsed currents up to $110\text{ A}$ ), the IRF540N is a standard choice for high-power DC motor drivers, H-bridge speed controllers, audio amplifiers, DC-DC buck/boost converters, and heavy solenoid switching.

Quick reference


Transistor Type	N-Channel Power HEXFET MOSFET
Package	TO-220AB (Metal tab connected to DRAIN)
Drain-Source Voltage ( $V_{DSS}$ )	$100\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$33\text{ A}$ at $T_C = 25^\circ\text{C}$ ( $23\text{ A}$ at $T_C = 100^\circ\text{C}$ )
Pulsed Drain Current ( $I_{DM}$ )	$110\text{ A}$
Gate Threshold Voltage ( $V_{GS(th)}$ )	$2.0\text{ V}$ min to $4.0\text{ V}$ max ( $3.0\text{ V}$ typical)
On-State Resistance ( $R_{DS(on)}$ )	$44\text{ m}\Omega$ max at $V_{GS} = 10\text{V}, I_D = 16\text{A}$
Total Power Dissipation ( $P_D$ )	$130\text{ W}$ ( $T_C = 25^\circ\text{C}$ )

Pinout (TO-220AB Package)

Looking at the front labeled face of the TO-220 package with leads pointing down:

text

        ┌─────────────┐
        │   O   [TAB] │  (Metal Mounting Tab = DRAIN)
        ├─────────────┤
        │   IRF540N   │  (Front Package Face)
        └─┬───┬───┬───┘
          1   2   3
          G   D   S

Pin	Name	Description
1	`GATE` (`G`)	Gate control input
2	`DRAIN` (`D`)	Drain terminal (Internal connection to metal tab)
3	`SOURCE` (`S`)	Source terminal (Ground reference 0 V)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown Volts	$V_{(BR)DSS}$	100	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Gate Threshold Voltage	$V_{GS(th)}$	2.0	3.0	4.0	V	$V_{DS} = V_{GS}, I_D = 250\ \mu\text{A}$
Drain-to-Source Leakage	$I_{DSS}$	—	—	25	µA	$V_{DS} = 100\text{V}, V_{GS} = 0\text{V}$
On-Resistance ( $V_{GS}=10\text{V}$ )	$R_{DS(on)}$	—	35	44	mΩ	$V_{GS} = 10\text{V}, I_D = 16\text{A}$
Total Gate Charge	$Q_g$	—	47	71	nC	$I_D = 16\text{A}, V_{DS} = 80\text{V}, V_{GS} = 10\text{V}$

High-Power Low-Side DC Motor Driver Circuit