IRLML6344 — 30V 5A Ultra-Low Rds(on) (22mΩ) N-Channel Logic-Level MOSFET (SOT-23)

Overview

The IRLML6344 (IRLML6344TRPBF) is an ultra-low on-resistance N-channel logic-level power MOSFET manufactured by Infineon Technologies (originally International Rectifier). Housed in an industry-standard miniature 3-lead SOT-23 (Micro3) surface-mount package, it provides exceptional current-handling capability in ultra-compact PCB layouts.

Rated for a drain-to-source breakdown voltage of $30\text{V}$ and a continuous drain current up to $5.0\text{A}$ , the IRLML6344 is distinguished by its sub-logic gate threshold ( $V_{GS(th)} = 0.5\text{V} \dots 1.1\text{V}$ ) and ultra-low on-resistance: $22\text{ m}\Omega$ at $10\text{V}$ , $29\text{ m}\Omega$ at $4.5\text{V}$ , and $37\text{ m}\Omega$ at $2.5\text{V}$ . It can be driven directly to full saturation from $1.8\text{V}$ , $2.5\text{V}$ , $3.3\text{V}$ , or $5.0\text{V}$ microcontroller GPIO pins without requiring level-shifting gate drivers, making it the premier choice for micro-drone motor drivers, DC solenoid actuators, 3.3V battery power switches, and addressable LED power gating.

Quick reference


Transistor Type	N-Channel Logic-Level Power MOSFET
Package	SOT-23-3 (Micro3) SMD
Drain-Source Voltage ( $V_{DSS}$ )	$30\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$5.0\text{ A}$ at $T_A = 25^\circ\text{C}$ ( $4.0\text{ A}$ at $70^\circ\text{C}$ )
Pulsed Drain Current ( $I_{DM}$ )	$20.0\text{ A}$
On-Resistance ( $R_{DS(on)}$ at 4.5V)	$29\text{ m}\Omega$ ( $0.029\ \Omega$ ) max
On-Resistance ( $R_{DS(on)}$ at 2.5V)	$37\text{ m}\Omega$ ( $0.037\ \Omega$ ) max
Gate Threshold Voltage ( $V_{GS(th)}$ )	$0.5\text{ V}$ to $1.1\text{ V}$ (Sub-logic threshold)
Total Gate Charge ( $Q_g$ )	$4.0\text{ nC}$ typ ( $6.0\text{ nC}$ max)
Power Dissipation ( $P_D$ )	$1.3\text{ Watts}$ (on standard 1-inch FR-4 copper pad)

Pinout (SOT-23-3 Package)

Looking at the top surface of the SOT-23 package with two leads on the bottom and one lead on the top:

text

           ┌───────────┐
           │ 3: DRAIN  │
           └───┬───┬───┘
               │   │
           ┌───┴───┴───┐
           │ IRLML6344 │
           └───┬───┬───┘
               │   │
           ┌───┴───┴───┐
           │ 1: GATE   │ 2: SOURCE
           └───────────┘

Pin	Name	Type	Description
1	`GATE`	Gate Input	Gate control terminal (Connect to MCU GPIO via $100\ \Omega$ series resistor)
2	`SOURCE`	Power Source	Source terminal (Connect to system Ground / $0\text{ V}$ )
3	`DRAIN`	Power Drain	Drain switching terminal (Connect to negative terminal of switched load)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown	$V_{(BR)DSS}$	30	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Static Drain-Source $R_{DS(on)}$	$R_{DS(on)}$	—	17	22	mΩ	$V_{GS} = 10\text{V}, I_D = 5.0\text{A}$
Static Drain-Source $R_{DS(on)}$	$R_{DS(on)}$	—	22	29	mΩ	$V_{GS} = 4.5\text{V}, I_D = 4.0\text{A}$
Static Drain-Source $R_{DS(on)}$	$R_{DS(on)}$	—	28	37	mΩ	$V_{GS} = 2.5\text{V}, I_D = 2.0\text{A}$
Gate Threshold Voltage	$V_{GS(th)}$	0.5	0.8	1.1	V	$V_{DS} = V_{GS}, I_D = 25\ \mu\text{A}$
Zero Gate Voltage Current	$I_{DSS}$	—	—	1.0	µA	$V_{DS} = 24\text{V}, V_{GS} = 0\text{V}$
Gate-Body Leakage Current	$I_{GSS}$	—	—	$\pm 100$	nA	$V_{GS} = \pm 12\text{V}$
Diode Forward Voltage	$V_{SD}$	—	—	1.2	V	$I_S = 1.3\text{A}, V_{GS} = 0\text{V}$

Typical Low-Side Switching Circuit (3.3V / 1.8V MCU Control)

text

                       +12V DC Motor / Solenoid / LED Strip Supply
                                   │
                               [ + Load - ]
                                   │
                                   ├───[ Flyback Diode (e.g. 1N5819) ]───┐
                                   │   (Anode to Drain, Cathode to +12V)  │
                             [Pin 3: DRAIN]                              │
                               IRLML6344                                 │
  MCU GPIO (1.8V - 3.3V)     [Pin 1: GATE]                               │
          │                        │                                     │
          ├───[ 100Ω Resistor ]────┤                                     │
          │                        ├───[ 10kΩ Pull-Down Resistor ]───────┤
         GND                       │                                     │
                             [Pin 2: SOURCE]                             │
                                   │                                     │
                                  GND ───────────────────────────────────┴─── Common GND

Comparison: IRLML6344 vs IRLML2502 vs 2N7002

Parameter	IRLML6344	IRLML2502	2N7002
$V_{DSS}$ Voltage	$30\text{ V}$	$20\text{ V}$	$60\text{ V}$
Continuous Current ( $I_D$ )	$5.0\text{ A}$	$4.2\text{ A}$	$0.115\text{ A}$ ( $115\text{mA}$ )
$R_{DS(on)}$ at 4.5V	$29\text{ m}\Omega$ ( $0.029\ \Omega$ )	$45\text{ m}\Omega$	$5000\text{ m}\Omega$ ( $5.0\ \Omega$ )
$R_{DS(on)}$ at 2.5V	$37\text{ m}\Omega$	$80\text{ m}\Omega$	Not Specified (High)

Common mistakes

Exceeding the $\pm 12\text{V}$ maximum gate voltage ( $V_{GS}$ ): Sub-logic MOSFETs have thin gate oxide layers. The absolute maximum gate-to-source rating is $\pm 12\text{V}$ (unlike standard 20V gates). Never connect the gate directly to a 12V or 24V supply.
Omitting thermal copper heatsinking for high continuous currents: While the silicon die is rated for 5A, continuous loads above $2.5\text{A}$ require adequate PCB copper pour attached to Pin 3 (Drain) to dissipate heat without exceeding $150^\circ\text{C}$ .

Notes

Suffix Guide: TRPBF denotes Tape & Reel Lead-Free packaging.

Interface	3-Terminal SOT-23 (Gate, Source, Drain)
Package	SOT-23-3 (Micro3)