IRFB4110 — 100V 180A Extreme-Current Ultra-Low Rds(on) (3.7mΩ) N-Channel Power MOSFET (TO-220)

Overview

The IRFB4110 (IRFB4110PBF) is an ultra-high-current, benchmark low on-resistance N-channel power HEXFET MOSFET manufactured by Infineon Technologies (originally International Rectifier). Housed in a through-hole TO-220AB package, it has achieved legendary status across the DIY engineering community as the ultimate power MOSFET for high-voltage, high-current switching.

Rated for a drain-to-source breakdown voltage of $100\text{V}$ , a massive continuous drain current of $180\text{A}$ (silicon die limit; $75\text{A}$ lead limit), and an astonishingly low typical on-resistance of just $3.7\text{ m}\Omega$ ( $0.0037\ \Omega$ ) at $V_{GS} = 10\text{V}$ , the IRFB4110 dissipates up to $370\text{ Watts}$ with a maximum junction temperature of $175^\circ\text{C}$ . Because it combines a high $100\text{V}$ voltage rating with sub- $4\text{m}\Omega$ conduction losses, it is the premier component of choice for DIY lithium battery spot welders (e.g. kWeld), 48V–72V e-bike and electric motorcycle BLDC speed controllers (ESCs), high-power ZVS induction heaters, and heavy-duty 24V/48V solar inverters.

Quick reference


Transistor Type	Ultra-High-Power N-Channel HEXFET Power MOSFET
Package	TO-220AB (3-pin through-hole) / D2PAK
Drain-Source Voltage ( $V_{DSS}$ )	$100\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$180\text{ A}$ ( $T_C = 25^\circ\text{C}$ , Silicon limit; $75\text{ A}$ Package Lead limit)
Pulsed Drain Current ( $I_{DM}$ )	$670\text{ A}$
On-Resistance ( $R_{DS(on)}$ at 10V)	$3.7\text{ m}\Omega$ typ / $4.5\text{ m}\Omega$ ( $0.0045\ \Omega$ ) max
Gate Threshold Voltage ( $V_{GS(th)}$ )	$2.0\text{ V}$ to $4.0\text{ V}$ (Requires $10\text{V} \dots 15\text{V}$ gate drive)
Gate-to-Source Voltage ( $V_{GS}$ )	$\pm 20\text{ V}$ max
Total Gate Charge ( $Q_g$ )	$150\text{ nC}$ typ ( $230\text{ nC}$ max)
Total Power Dissipation ( $P_D$ )	$370\text{ Watts}$ ( $T_C = 25^\circ\text{C}$ )
Operating Junction Temp	$-55^\circ\text{C}$ to $+175^\circ\text{C}$

Pinout (TO-220AB Package)

Looking at the front labeled face with leads pointing downward:

text

        ┌──────────────┐
        │  O  [Metal]  │ ── Tab is internally connected to Pin 2 (Drain)
        ├──────────────┤
        │   IRFB4110   │
        └─┬────┬────┬──┘
          1    2    3
          G    D    S

Pin	Name	Type	Description
1	`GATE`	Gate Input	Gate control terminal (Drive with $10\text{V} \dots 15\text{V}$ with fast peak current capability)
2 (Tab)	`DRAIN`	Power Drain	Drain switching terminal (Internally connected to metal mounting tab)
3	`SOURCE`	Power Source	Source terminal (Connect to ground or negative return busbar)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown	$V_{(BR)DSS}$	100	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Static Drain-Source $R_{DS(on)}$	$R_{DS(on)}$	—	3.7	4.5	mΩ	$V_{GS} = 10\text{V}, I_D = 75\text{A}$
Gate Threshold Voltage	$V_{GS(th)}$	2.0	—	4.0	V	$V_{DS} = V_{GS}, I_D = 250\ \mu\text{A}$
Drain-Source Leakage	$I_{DSS}$	—	—	20	µA	$V_{DS} = 100\text{V}, V_{GS} = 0\text{V}$
Gate-Body Leakage Current	$I_{GSS}$	—	—	$\pm 100$	nA	$V_{GS} = \pm 20\text{V}$
Diode Forward Voltage	$V_{SD}$	—	—	1.3	V	$I_S = 75\text{A}, V_{GS} = 0\text{V}$
Thermal Resistance	$R_{\theta JC}$	—	—	0.40	°C/W	Junction-to-Case

Typical High-Power Battery Spot Welder Stage (Paralleled Array)

In DIY battery spot welders switching $800\text{A} \dots 1500\text{A}$ pulses for $5\text{ ms} \dots 20\text{ ms}$ , multiple IRFB4110 MOSFETs are wired in parallel across heavy copper busbars:

text

                      +12V Car Battery / Ultra-Capacitor Bank
                                         │
                                [ Welding Probes & Nickel Strip ]
                                         │
                                         ├───► [Pin 2: DRAIN (Heavy Copper Busbar)]
                                         │
       Gate Driver (12V, 6A Peak)        │
       (e.g. MIC4452 / TC4422)           │
               │                         │
               ├──[ 4.7Ω Gate Resistor ]─┼───► [Pin 1: GATE of MOSFET 1 (IRFB4110)]
               ├──[ 4.7Ω Gate Resistor ]─┼───► [Pin 1: GATE of MOSFET 2 (IRFB4110)]
               ├──[ 4.7Ω Gate Resistor ]─┼───► [Pin 1: GATE of MOSFET 3 (IRFB4110)]
               └──[ 4.7Ω Gate Resistor ]─┼───► [Pin 1: GATE of MOSFET 4 (IRFB4110)]
                                         │
                                         └───► [Pin 3: SOURCE (Heavy Ground Busbar)] ── Common GND

Comparison: IRFB4110 vs IRF3205 vs IRFZ44N

Parameter	IRFB4110	IRF3205	IRFZ44N
$V_{DSS}$ Voltage	$100\text{ V}$	$55\text{ V}$	$55\text{ V}$
Max Current ( $I_D$ )	$180\text{ A}$	$110\text{ A}$	$49\text{ A}$
$R_{DS(on)}$ at 10V	$3.7\text{ m}\Omega$	$8.0\text{ m}\Omega$	$17.5\text{ m}\Omega$
Power Dissipation ( $P_D$ )	$370\text{ W}$	$200\text{ W}$	$94\text{ W}$
Thermal Res. ( $\theta_{JC}$ )	$0.40^\circ\text{C/W}$	$0.75^\circ\text{C/W}$	$1.5^\circ\text{C/W}$

Common mistakes

Driving large gate capacitance with high source impedance: With a total gate charge of $Q_g \approx 150\text{ nC}$ ( $C_{iss} \approx 9600\text{ pF}$ ), driving IRFB4110s at high PWM frequencies requires high-current gate driver ICs (capable of $2\text{A} \dots 6\text{A}$ peak current). Driving directly from high-impedance logic outputs will result in slow rise times and extreme switching losses.
Paralleling gates directly without individual series resistors: When paralleling multiple IRFB4110s, always give each individual gate its own dedicated $2.2\ \Omega \dots 10\ \Omega$ series resistor directly at the pin to prevent high-frequency gate oscillations (ringing) caused by PCB parasitic inductances.

Notes

Suffix Guide: IRFB4110PBF denotes lead-free through-hole TO-220AB; IRFS4110PBF denotes surface-mount D2PAK.

Interface	3-Terminal TO-220 (Gate, Drain, Source)
Package	TO-220AB (3-pin through-hole) / D2PAK