STP16NF06 — 60V 16A N-Channel Power MOSFET (TO-220)

Overview

The STP16NF06 is a $60\text{V}$ $16\text{A}$ N-channel power MOSFET manufactured by STMicroelectronics using proprietary STripFET II planar technology. Available in a standard through-hole TO-220-3 package (and surface-mount DPAK as STD16NF06), it is one of the most widespread European-sourced power MOSFETs found in educational electronics labs, robotics kits, and DIY hardware designs across Europe.

Featuring a drain-to-source breakdown voltage of $60\text{V}$ , a continuous current rating of $16\text{A}$ at $25^\circ\text{C}$ , a typical on-resistance of $70\text{ m}\Omega$ ( $0.07\ \Omega$ ) at $V_{GS} = 10\text{V}$ , and an exceptionally low total gate charge of $14.5\text{ nC}$ , the STP16NF06 switches rapidly with minimal drive power. It is ideal for $12\text{V} \dots 24\text{V}$ brushed DC motor control, solenoid and valve actuators, 3D printer hotend/fan switching, and audio amplifier power supply rails.

Quick reference


Transistor Type	N-Channel STripFET II Power MOSFET
Package	TO-220-3 (through-hole) / DPAK (STD16NF06 SMD)
Drain-Source Voltage ( $V_{DSS}$ )	$60\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$16\text{ A}$ at $T_C = 25^\circ\text{C}$ ( $11.3\text{ A}$ at $100^\circ\text{C}$ )
Pulsed Drain Current ( $I_{DM}$ )	$64\text{ A}$
On-Resistance ( $R_{DS(on)}$ at 10V)	$70\text{ m}\Omega$ typ / $80\text{ m}\Omega$ ( $0.08\ \Omega$ ) max
Gate Threshold Voltage ( $V_{GS(th)}$ )	$2.0\text{ V}$ to $4.0\text{ V}$ (Requires $10\text{V} \dots 12\text{V}$ gate drive)
Total Gate Charge ( $Q_g$ )	$14.5\text{ nC}$ typ ( $20\text{ nC}$ max)
Total Power Dissipation ( $P_D$ )	$45\text{ Watts}$ ( $T_C = 25^\circ\text{C}$ )
Operating Junction Temp	$-55^\circ\text{C}$ to $+175^\circ\text{C}$

Pinout (TO-220-3 Package)

Looking at the front labeled face with leads pointing downward:

text

        ┌──────────────┐
        │  O  [Metal]  │ ── Tab is internally connected to Pin 2 (Drain)
        ├──────────────┤
        │  STP16NF06   │
        └─┬────┬────┬──┘
          1    2    3
          G    D    S

Pin	Name	Type	Description
1	`GATE`	Gate Input	Gate control terminal (Drive with $10\text{V} \dots 15\text{V}$ for full saturation)
2 (Tab)	`DRAIN`	Power Drain	Drain switching terminal (Internally connected to metal mounting tab)
3	`SOURCE`	Power Source	Source terminal (Connect to ground or negative return rail)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown	$V_{(BR)DSS}$	60	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Static Drain-Source $R_{DS(on)}$	$R_{DS(on)}$	—	70	80	mΩ	$V_{GS} = 10\text{V}, I_D = 8.0\text{A}$
Gate Threshold Voltage	$V_{GS(th)}$	2.0	—	4.0	V	$V_{DS} = V_{GS}, I_D = 250\ \mu\text{A}$
Drain-Source Leakage	$I_{DSS}$	—	—	1.0	µA	$V_{DS} = 60\text{V}, V_{GS} = 0\text{V}$
Gate-Body Leakage Current	$I_{GSS}$	—	—	$\pm 100$	nA	$V_{GS} = \pm 20\text{V}$
Diode Forward Voltage	$V_{SD}$	—	—	1.5	V	$I_S = 16\text{A}, V_{GS} = 0\text{V}$
Thermal Resistance	$R_{\theta JC}$	—	—	3.33	°C/W	Junction-to-Case

Typical Application Circuit: 12V/24V DC Motor PWM Speed Controller

text

                      +12V to +24V DC Motor Supply
                                   │
                               [ + DC Motor - ]
                                   │
                                   ├───[ Flyback Catch Diode (e.g. 1N5822 / MBR360) ]───┐
                                   │   (Anode to Drain, Cathode to +Supply)             │
                             [Pin 2: DRAIN]                                             │
                                STP16NF06                                               │
  MCU PWM Signal (via driver)[Pin 1: GATE]                                              │
  (e.g. TC4427 / BJT Driver)       │                                                    │
          │                        ├───[ 10kΩ Gate Pull-Down Resistor ]─────────────────┤
          ├───[ 22Ω Gate Resistor ]┤                                                    │
         GND                       │                                                    │
                             [Pin 3: SOURCE]                                            │
                                   │                                                    │
                                  GND ──────────────────────────────────────────────────┴─── Common GND

Comparison: STP16NF06 vs IRFZ44N vs FQP30N06L

Parameter	STP16NF06	IRFZ44N	FQP30N06L
$V_{DSS}$ Rating	$60\text{ V}$	$55\text{ V}$	$60\text{ V}$
Max Current ( $I_D$ )	$16\text{ A}$	$49\text{ A}$	$32\text{ A}$
$R_{DS(on)}$ at 10V	$70\text{ m}\Omega$	$17.5\text{ m}\Omega$	$35\text{ m}\Omega$
Gate Charge ( $Q_g$ )	$14.5\text{ nC}$ (Fast)	$63\text{ nC}$	$15\text{ nC}$
5V Logic Drive	Standard ( $10\text{V}$ )	Standard ( $10\text{V}$ )	Logic-Level ( $4.5\text{V}$ )

Common mistakes

Driving directly from 3.3V or 5V MCU pins: The standard STP16NF06 requires $10\text{V}$ on its gate for full conduction. If driven directly from 3.3V/5V microcontroller outputs, the channel will partially conduct and overheat under moderate currents. (For 5V logic drive, use the logic-level STP16NF06L or FQP30N06L).
Omitting the flyback diode with inductive loads: Solenoids, relays, and brushed motors create hundreds of volts of back-EMF upon shutoff. Always place a fast Schottky catch diode directly across the load.

Notes

Suffix Guide: STP16NF06 denotes standard 10V gate drive in TO-220; STP16NF06L denotes logic-level 5V gate drive; STD16NF06 denotes SMD DPAK packaging.

Interface	3-Terminal TO-220 (Gate, Drain, Source)
Package	TO-220-3 (through-hole) / DPAK (STD16NF06) / D2PAK