RFP30N06LE — 60V 30A Logic-Level N-Channel Power MOSFET (TO-220)

Overview

The RFP30N06LE is a classic 60V, 30A N-channel logic-level power MOSFET manufactured by onsemi (formerly Intersil / Harris Semiconductor / Fairchild) in a through-hole TO-220AB package. Built using the proprietary MegaFET manufacturing process, it was engineered specifically to achieve full saturation and low on-resistance from low gate-source voltages.

With a maximum $R_{DS(on)}$ of $47\text{ m}\Omega$ at $V_{GS} = 5.0\text{V}$ and a low gate threshold voltage ( $V_{GS(th)} = 1.0\text{V} \dots 2.0\text{V}$ ), the RFP30N06LE gained iconic status as the go-to MOSFET in early SparkFun tutorials, the Arduino Cookbook, and maker robotics projects for driving 12V DC motors, automotive relays, and high-brightness LED arrays directly from 5V microcontroller GPIOs.

Quick reference


Transistor Type	N-Channel Logic-Level Power MOSFET (MegaFET)
Package	TO-220AB (Pin 1: Gate, Pin 2: Drain/Tab, Pin 3: Source)
Drain-Source Voltage ( $V_{DSS}$ )	$60\text{ V}$ max
Continuous Drain Current ( $I_D$ )	$30\text{ A}$ at $T_C = 25^\circ\text{C}$ ( $21\text{ A}$ at $100^\circ\text{C}$ )
Gate Threshold Voltage ( $V_{GS(th)}$ )	$1.0\text{ V}$ min to $2.0\text{ V}$ max
On-Resistance ( $R_{DS(on)}$ )	$47\text{ m}\Omega$ max at $V_{GS} = 5.0\text{V}, I_D = 30\text{A}$
Pulsed Drain Current ( $I_{DM}$ )	$75\text{ A}$
Total Power Dissipation ( $P_D$ )	$96\text{ W}$ ( $T_C = 25^\circ\text{C}$ )

Terminal identification

text

        ┌─────────┐
        │  TO-220 │
        │ P30N06LE│
        └─┬───┬───┬─┘
          1   2   3
          G   D   S

Pin	Terminal	Description
1	`Gate` (`G`)	Gate control input (Connect to MCU GPIO via $220\ \Omega$ series resistor)
2 / Tab	`Drain` (`D`)	High-power load switching terminal / Tab (Connect to load negative return)
3	`Source` (`S`)	Source terminal (Connect to Common System Ground 0 V)

Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown Voltage	$V_{(BR)DSS}$	60	—	—	V	$V_{GS} = 0\text{V}, I_D = 250\ \mu\text{A}$
Gate-Source Threshold Voltage	$V_{GS(th)}$	1.0	—	2.0	V	$V_{DS} = V_{GS}, I_D = 250\ \mu\text{A}$
On-Resistance ( $V_{GS} = 5.0\text{V}$ )	$R_{DS(on)}$	—	—	47	mΩ	$V_{GS} = 5.0\text{V}, I_D = 30\text{A}$
Gate-to-Source Breakdown Volts	$V_{GSS}$	$\pm 10$	—	—	V	Maximum gate oxide voltage limit
Turn-On Delay Time	$t_{d(on)}$	—	20	—	ns	$V_{DD} = 30\text{V}, I_D = 30\text{A}, R_G = 50\ \Omega$
Turn-Off Delay Time	$t_{d(off)}$	—	85	—	ns	$V_{DD} = 30\text{V}, I_D = 30\text{A}, R_G = 50\ \Omega$

Typical circuits

Microcontroller Motor Switching Circuit (5V / 3.3V Logic)

text

        +12V / +24V Motor Supply
           │
         [ DC MOTOR ]
           │
           ├─── [ Flyback Diode 1N4007 across Motor ]
           │
        [Pin 2: DRAIN]
         RFP30N06LE
        [Pin 3: SOURCE] ─── GND (Common System Ground)
           │
        [Pin 1: GATE] ◄───[ R_gate = 220Ω ]───◄ Arduino / MCU GPIO Pin
           │
        [ R_pulldown = 10kΩ ]
           │
          GND

Selection & substitutes

Part Number	$V_{DSS}$	$I_D$	$R_{DS(on)}$ at 5V	Notes
RFP30N06LE	$60\text{ V}$	$30\text{ A}$	$47\text{ m}\Omega$	Classic MegaFET part from early tutorials
FQP30N06L	$60\text{ V}$	$32\text{ A}$	$45\text{ m}\Omega$	Modern planar QFET drop-in replacement
IRLZ44N	$55\text{ V}$	$47\text{ A}$	$22\text{ m}\Omega$	Lower on-resistance, higher current capability

Common mistakes

Exceeding the $\pm 10\text{V}$ Gate-Source limit ( $V_{GS}$ ): Unlike standard MOSFETs that permit $\pm 20\text{V}$ on the gate, the thinner gate oxide of the RFP30N06LE has an absolute maximum rating of $\pm 10\text{V}$ . Never connect the gate directly to a 12V or 24V supply.
Omitting the flyback diode with inductive loads: Switching an inductive load (motor, relay, solenoid) without a reverse-biased flyback diode across the load will generate high-voltage inductive spikes that exceed the $60\text{V}$ breakdown limit, destroying the MOSFET.

Notes

Suffix Identification: The "LE" suffix indicates Logic-Level gate threshold with enhanced ESD gate protection.