Overview

The 2N4403 (and its surface-mount version MMBT4403) is a general-purpose PNP bipolar junction transistor manufactured by onsemi, Fairchild, STMicroelectronics, and Central Semiconductor. Housed in a through-hole TO-92 plastic package with standard Emitter - Base - Collector (E-B-C) pinout, it serves as the official PNP complement to the 2N4401.

Sharing the same physical footprint and 40V40\text{V} breakdown voltage as the classic 2N3906, the 2N4403 delivers a continuous collector current rating of 600 mA-600\text{ mA} (three times the current of the 2N3906). Featuring a high transition frequency (fTf_T) of 200 MHz200\text{ MHz} and low saturation voltage (VCE(sat)0.4VV_{CE(sat)} \le -0.4\text{V} at 150mA-150\text{mA}), it is the premier choice for high-side 5V/12V5\text{V}/12\text{V} relay and lamp switching, complementary push-pull audio drivers, discrete H-bridges, and fast saturation switches.

Quick reference

Transistor TypeHigher-Current General-Purpose Silicon PNP BJT
PackageTO-92 (3-pin through-hole) / SOT-23 (MMBT4403)
Collector-Emitter Breakdown (VCEOV_{CEO})40 V-40\text{ V} max
Collector-Base Breakdown (VCBOV_{CBO})40 V-40\text{ V} max
Continuous Collector Current (ICI_C)600 mA-600\text{ mA} max
DC Current Gain (hFEh_{FE})100100 to 300300 (IC=150mA,VCE=2.0VI_C = -150\text{mA}, V_{CE} = -2.0\text{V}) / 20\ge 20 at 500mA-500\text{mA}
Transition Frequency (fTf_T)200 MHz200\text{ MHz} min
Total Power Dissipation (PDP_D)625 mW625\text{ mW} (TA=25CT_A = 25^\circ\text{C})
Complementary NPN Pair2N4401 (40V 600mA NPN)

Pinout (TO-92 Package - E-B-C Standard)

Looking at the flat front face with leads pointing downward:

text
        ┌─────────┐
        │  TO-92  │
        │ 2N4403  │
        └─┬───┬───┬─┘
          1   2   3
          E   B   C
PinNameTypeDescription
1EMITTER (E)Emitter TerminalEmitter (Connect to positive supply rail or emitter resistor)
2BASE (B)Base TerminalBase control input (Driven with base current via series resistor)
3COLLECTOR (C)Collector TerminalCollector output (Connected to high-side switched DC load)

Specifications

ParameterSymbolMinTypMaxUnitConditions
Collector-Emitter BreakdownV(BR)CEOV_{(BR)CEO}-40VIC=1.0mA,IB=0I_C = -1.0\text{mA}, I_B = 0
Collector-Base BreakdownV(BR)CBOV_{(BR)CBO}-40VIC=100 μA,IE=0I_C = -100\ \mu\text{A}, I_E = 0
Emitter-Base BreakdownV(BR)EBOV_{(BR)EBO}-5.0VIE=100 μA,IC=0I_E = -100\ \mu\text{A}, I_C = 0
DC Current Gain (hFEh_{FE})hFEh_{FE}30IC=0.1mA,VCE=1.0VI_C = -0.1\text{mA}, V_{CE} = -1.0\text{V}
DC Current Gain (hFEh_{FE})hFEh_{FE}100300IC=150mA,VCE=2.0VI_C = -150\text{mA}, V_{CE} = -2.0\text{V}
DC Current Gain (hFEh_{FE})hFEh_{FE}20IC=500mA,VCE=2.0VI_C = -500\text{mA}, V_{CE} = -2.0\text{V}
Collector Saturation VoltageVCE(sat)V_{CE(sat)}-0.40VIC=150mA,IB=15mAI_C = -150\text{mA}, I_B = -15\text{mA}
Collector Saturation VoltageVCE(sat)V_{CE(sat)}-0.75VIC=500mA,IB=50mAI_C = -500\text{mA}, I_B = -50\text{mA}
Base Saturation VoltageVBE(sat)V_{BE(sat)}-0.75-0.95VIC=150mA,IB=15mAI_C = -150\text{mA}, I_B = -15\text{mA}

Typical Application Circuit: High-Side 12V 400mA Solenoid Switch

text
  +12V DC Supply ─────────────────────────────────┬─────────► [Pin 1: EMITTER]
                                                  │              2N4403 (PNP)
                                           [ 10kΩ Pull-Up ]      [Pin 3: COLLECTOR] ──► [ + 400mA Load - ] ──┐
                                                  │                 │                                         │
                                                  ├─────────► [Pin 2: BASE]                                   │
                                                  │                                                           │
                                            [ COLLECTOR ]                                                     │
  MCU GPIO (3.3V / 5V) ───[ 1kΩ Resistor ]──► Base of 2N3904 (NPN)                                            │
                                            [ EMITTER ]                                                       │
                                                  │                                                           │
  Common Ground (0V) ─────────────────────────────┴───────────────────────────────────────────────────────────┴── Ground Return

Comparison: 2N4403 vs 2N3906 vs 2N2907A

Parameter2N39062N44032N2907A
Max Current (ICI_C)200 mA-200\text{ mA}600 mA-600\text{ mA}600 mA-600\text{ mA}
VCEOV_{CEO} Voltage40 V-40\text{ V}40 V-40\text{ V}60 V-60\text{ V}
Gain at 150mADrops severely (<30< 30)High (100300100 \dots 300)High (100300100 \dots 300)
Transition Freq (fTf_T)250 MHz250\text{ MHz}200 MHz200\text{ MHz}200 MHz200\text{ MHz}
Complementary NPN2N39042N44012N2222A

Common mistakes

  • Driving directly from an MCU pin on supplies above VCC_MCU: If the emitter of the 2N4403 is connected to +12V+12\text{V}, an MCU GPIO driving +5V+5\text{V} leaves VEB=7VV_{EB} = 7\text{V}, forward-biasing the base-emitter junction and driving destructive current into the microcontroller's internal ESD protection diodes. Always use an intermediate NPN pull-down transistor or open-drain buffer for supplies >5V> 5\text{V}.

Notes

  • Suffix Guide: 2N4402 is a lower gain (hFE=50150h_{FE} = 50 \dots 150) variant; 2N4403 is the full performance part; MMBT4403 is the SOT-23 surface-mount package.

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