Overview

The VN2222LL is a small-signal N-channel enhancement-mode vertical DMOS FET manufactured by Microchip Technology (originally Supertex), Siliconix, and Diodes Incorporated. Housed in a through-hole TO-92 package, its part number was deliberately coined as a MOSFET counterpart to the iconic 2N2222 bipolar transistor.

Rated for a drain-to-source voltage of 60V60\text{V}, continuous drain current of 230 mA230\text{ mA} (1.0A1.0\text{A} pulsed), and a low gate threshold voltage of 0.6V2.4V0.6\text{V} \dots 2.4\text{V}, the VN2222LL provides sub-10ns10\text{ns} high-speed switching with zero DC base current. It is widely employed as a pin-compatible alternative to the 2N7000 for miniature 5V/12V5\text{V}/12\text{V} relay drivers, LED indicators, bidirectional logic level converters (3.3V5V3.3\text{V} \leftrightarrow 5\text{V}), and analog signal muting gates.

Quick reference

Transistor TypeSmall-Signal N-Channel Vertical DMOS FET
PackageTO-92 (3-pin through-hole)
Drain-Source Voltage (VDSSV_{DSS})60 V60\text{ V} max
Continuous Drain Current (IDI_D)230 mA230\text{ mA} (0.23 A0.23\text{ A}) continuous / 1.0 A1.0\text{ A} pulsed
On-Resistance (RDS(on)R_{DS(on)} at 10V)7.5 Ω7.5\ \Omega max
On-Resistance (RDS(on)R_{DS(on)} at 4.5V)10.0 Ω10.0\ \Omega max
Gate Threshold Voltage (VGS(th)V_{GS(th)})0.6 V0.6\text{ V} to 2.4 V2.4\text{ V} (Direct 3.3V and 5V logic compatible)
Turn-On Delay Time (td(on)t_{d(on)})<10 ns< 10\text{ ns} (High-speed switching)
Total Power Dissipation (PDP_D)1.0 Watt1.0\text{ Watt}
Operating Temp Range55C-55^\circ\text{C} to +150C+150^\circ\text{C}

Pinout (TO-92 Package - S-G-D Standard)

Looking at the flat front face with leads pointing downward:

text
        ┌─────────┐
        │  TO-92  │
        │VN2222LL │
        └─┬───┬───┬─┘
          1   2   3
          S   G   D
PinNameTypeDescription
1SOURCEPower SourceSource terminal (Connect to common ground / 0 V0\text{ V})
2GATEGate InputGate control terminal (High-impedance logic voltage input)
3DRAINPower DrainDrain switching terminal (Connect to switched load)

Specifications

ParameterSymbolMinTypMaxUnitConditions
Drain-Source BreakdownV(BR)DSSV_{(BR)DSS}60VVGS=0V,ID=10 μAV_{GS} = 0\text{V}, I_D = 10\ \mu\text{A}
Static Drain-Source RDS(on)R_{DS(on)}RDS(on)R_{DS(on)}4.07.5ΩVGS=10V,ID=500mAV_{GS} = 10\text{V}, I_D = 500\text{mA}
Static Drain-Source RDS(on)R_{DS(on)}RDS(on)R_{DS(on)}5.510.0ΩVGS=4.5V,ID=200mAV_{GS} = 4.5\text{V}, I_D = 200\text{mA}
Gate Threshold VoltageVGS(th)V_{GS(th)}0.61.52.4VVDS=VGS,ID=1.0mAV_{DS} = V_{GS}, I_D = 1.0\text{mA}
Drain-Source LeakageIDSSI_{DSS}10µAVDS=60V,VGS=0VV_{DS} = 60\text{V}, V_{GS} = 0\text{V}
Gate-Body LeakageIGSSI_{GSS}±100\pm 100nAVGS=±20V,VDS=0VV_{GS} = \pm 20\text{V}, V_{DS} = 0\text{V}
Input CapacitanceCISSC_{ISS}4560pFVDS=25V,VGS=0V,f=1MHzV_{DS} = 25\text{V}, V_{GS} = 0\text{V}, f = 1\text{MHz}

Typical Relay Driver Circuit (3.3V / 5V MCU Control)

text
                       +5V / +12V DC Relay Supply

                           [ + Relay Coil - ]

                                   ├───[ 1N4148 / 1N4007 Flyback Diode ]───┐
                                   │   (Anode to Drain, Cathode to +V)     │
                             [Pin 3: DRAIN]                                │
                                VN2222LL                                   │
  MCU GPIO (3.3V / 5.0V)     [Pin 2: GATE]                                 │
          │                        │                                       │
          ├───[ 100Ω Resistor ]────┤                                       │
          │                        ├───[ 100kΩ Pull-Down Resistor ]────────┤
         GND                       │                                       │
                             [Pin 1: SOURCE]                               │
                                   │                                       │
                                  GND ─────────────────────────────────────┴─── Common GND

Comparison: VN2222LL vs 2N7000 vs BS170

ParameterVN2222LL2N7000BS170
VDSSV_{DSS} Breakdown60 V60\text{ V}60 V60\text{ V}60 V60\text{ V}
Max Current (IDI_D)230 mA230\text{ mA}200 mA200\text{ mA}500 mA500\text{ mA}
RDS(on)R_{DS(on)} at 10V7.5 Ω7.5\ \Omega5.0 Ω5.0\ \Omega5.0 Ω5.0\ \Omega
TO-92 Pinout (Flat Face)S - G - DS - G - DD - G - S (Reversed!)
Power Dissipation1.0 W1.0\text{ W}0.4 W0.4\text{ W}0.83 W0.83\text{ W}

Common mistakes

  • Confusing TO-92 pinouts with BS170: While the VN2222LL and 2N7000 share the Source - Gate - Drain (S-G-D) lead sequence, the BS170 reverses Drain and Source (Drain - Gate - Source). Always verify pinouts before substituting.
  • Switching heavy loads exceeding 250mA: Small-signal TO-92 MOSFETs have a channel resistance of 5 Ω10 Ω5\ \Omega \dots 10\ \Omega. Trying to switch a 1.0A1.0\text{A} motor will cause excessive I2RI^2 R heating (P=12×7.5=7.5WP = 1^2 \times 7.5 = 7.5\text{W}) and vaporize the TO-92 package. For loads >500mA> 500\text{mA}, use a power MOSFET like the IRLML6344 or FQP30N06L.

Notes

  • Suffix Guide: LL designates low-leakage plastic TO-92; -G designates RoHS green molding compound.

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