Overview

The 2N7002 is a widely used small-signal N-channel Enhancement Mode MOSFET IC packaged in a 3-pin surface-mount SOT-23 enclosure. It is the SMD counterpart to the classic through-hole 2N7000 transistor.

Designed for low-power signal switching, LED drive, small relay coil activation, and bidirectional 3.3V5.0V3.3\text{V} \leftrightarrow 5.0\text{V} I2CI^2C logic level shifters, the 2N7002 handles drain-source voltages up to 60 Volts60\text{ Volts} and continuous drain currents up to 115 mA115\text{ mA}. With a low gate threshold voltage (VGS(th)V_{GS(th)} of 1.0V2.5V1.0\text{V} \dots 2.5\text{V}), it drives directly from 3.3V and 5V microcontroller GPIO pins.

Quick reference

Transistor TypeSmall-Signal N-Channel Enhancement Mode MOSFET
PackageSOT-23 (3-pin SMD)
Drain-Source Voltage (VDSSV_{DSS})60 V60\text{ V} max
Continuous Drain Current (IDI_D)115 mA115\text{ mA} continuous (300 mA300\text{ mA} pulsed)
Gate-Source Voltage (VGSV_{GS})±20 V\pm 20\text{ V} max (±40 V\pm 40\text{ V} peak transient)
Gate Threshold Voltage (VGS(th)V_{GS(th)})1.0 V1.0\text{ V} min to 2.5 V2.5\text{ V} max (1.8 V1.8\text{ V} typical)
On-State Resistance (RDS(on)R_{DS(on)})5.0 Ω5.0\ \Omega at VGS=10VV_{GS} = 10\text{V} / 7.5 Ω7.5\ \Omega at VGS=4.5VV_{GS} = 4.5\text{V}
Turn-on / Turn-off Time7 ns7\text{ ns} turn-on / 11 ns11\text{ ns} turn-off

Pinout (SOT-23 Package)

Looking at the top of the SOT-23 surface-mount component with single lead on top:

text
               ┌─────────┐
               │    3    │  (DRAIN)
               └─┐     ┌─┘
                 │2N702│
               ┌─┘     └─┐
               │ 1     2 │
               └─────────┘
            (GATE)   (SOURCE)
PinNameDescription
1GATE (G)Gate control input (MCU GPIO pin)
2SOURCE (S)Source terminal (Ground reference 0 V)
3DRAIN (D)Drain terminal (Low-side load connection)

Specifications

ParameterSymbolMinTypMaxUnitConditions
Drain-Source Breakdown VoltsV(BR)DSSV_{(BR)DSS}60VVGS=0V,ID=10 μAV_{GS} = 0\text{V}, I_D = 10\ \mu\text{A}
Gate Threshold VoltageVGS(th)V_{GS(th)}1.01.82.5VVDS=VGS,ID=250 μAV_{DS} = V_{GS}, I_D = 250\ \mu\text{A}
Zero Gate Voltage CurrentIDSSI_{DSS}1.0µAVDS=60V,VGS=0VV_{DS} = 60\text{V}, V_{GS} = 0\text{V}
On-Resistance (VGS=10VV_{GS}=10\text{V})RDS(on)R_{DS(on)}3.55.0ΩVGS=10V,ID=500mAV_{GS} = 10\text{V}, I_D = 500\text{mA}
On-Resistance (VGS=4.5VV_{GS}=4.5\text{V})RDS(on)R_{DS(on)}4.57.5ΩVGS=4.5V,ID=75mAV_{GS} = 4.5\text{V}, I_D = 75\text{mA}
Total Power DissipationPDP_D350mWTA=25CT_A = 25^\circ\text{C}

Common mistakes

  • Attempting to drive high-current loads (>150mA): The 2N7002 has an RDS(on)R_{DS(on)} of up to 7.5 Ω7.5\ \Omega at 4.5V4.5\text{V} gate drive. Driving heavy loads generates excessive heat for an SMD SOT-23 footprint. For loads >200 mA>200\text{ mA}, use a high-current SMD MOSFET like the AO3400 (33 mΩ33\text{ m}\Omega).
  • Leaving gate floating: Always place a 10 kΩ10\text{ k}\Omega pull-down resistor from Gate to Source (GND) to prevent floating electrostatic charges from inadvertently triggering the FET.

Notes

  • 2N7002 vs 2N7000 vs BSS138: 2N7002 is SOT-23 SMD (115 mA115\text{ mA}); 2N7000 is TO-92 through-hole (200 mA200\text{ mA}); BSS138 is SOT-23 SMD with lower threshold (1.3V1.3\text{V} typ) optimized for 3.3V level shifters.

Assets & downloads