Overview

The TIP32C is a general-purpose PNP power bipolar junction transistor (BJT) manufactured by STMicroelectronics and ON Semiconductor. Enclosed in a TO-220AB package, it is designed for medium-power linear voltage regulators, audio power amplifiers, motor speed control, and high-side DC load switching.

Supporting collector-emitter voltages up to 100 Volts-100\text{ Volts} and continuous collector currents up to 3.0 Amps-3.0\text{ Amps} (with peak currents up to 5.0 A-5.0\text{ A}), the TIP32C is the direct PNP complementary power transistor to the TIP31C.

Quick reference

Transistor TypePNP Power Bipolar Junction Transistor
PackageTO-220AB (Metal tab connected to COLLECTOR)
Collector-Emitter Voltage (VCEOV_{CEO})100 V-100\text{ V} max
Collector-Base Voltage (VCBOV_{CBO})100 V-100\text{ V} max
Continuous Collector Current (ICI_C)3.0 A-3.0\text{ A} continuous (5.0 A-5.0\text{ A} peak)
Base Current (IBI_B)1.0 A-1.0\text{ A} max
DC Current Gain (hFEh_{FE})25 to 50 at IC=1.0AI_C = -1.0\text{A} (105010\dots50 at IC=3.0AI_C = -3.0\text{A})
Transition Frequency (fTf_T)3.0 MHz3.0\text{ MHz} min
Power Dissipation (PDP_D)40 W40\text{ W} (TC=25CT_C = 25^\circ\text{C}) / 2.0 W2.0\text{ W} (TA=25CT_A = 25^\circ\text{C})

Pinout (TO-220AB Package)

Looking at the front labeled face of the TO-220 package with leads pointing down:

text
        ┌─────────────┐
        │   O   [TAB] │  (Metal Mounting Tab = COLLECTOR)
        ├─────────────┤
        │   TIP32C    │  (Front Package Face)
        └─┬───┬───┬───┘
          1   2   3
          B   C   E
PinNameDescription
1BASE (B)Base control input
2COLLECTOR (C)Collector terminal (Connected internally to tab)
3EMITTER (E)Emitter terminal (High-side power rail +VCC+V_{CC})

Specifications

ParameterSymbolMinTypMaxUnitConditions
Collector-Emitter BreakdownV(BR)CEOV_{(BR)CEO}-100VIC=30mA,IB=0I_C = -30\text{mA}, I_B = 0
DC Current Gain (IC=1AI_C=-1\text{A})hFEh_{FE}2550VCE=4V,IC=1AV_{CE} = -4\text{V}, I_C = -1\text{A}
DC Current Gain (IC=3AI_C=-3\text{A})hFEh_{FE}1050VCE=4V,IC=3AV_{CE} = -4\text{V}, I_C = -3\text{A}
Collector Saturation VoltsVCE(sat)V_{CE(sat)}-1.2VIC=3A,IB=375mAI_C = -3\text{A}, I_B = -375\text{mA}
Base-Emitter VoltageVBE(on)V_{BE(on)}-1.8VVCE=4V,IC=3AV_{CE} = -4\text{V}, I_C = -3\text{A}

Common mistakes

  • Driving directly from MCU GPIO on high-voltage supply rails: With hFE25h_{FE} \approx 25, switching a 3A-3\text{A} load requires an IBI_B base current of 100 mA\sim 100\text{ mA}, far beyond an MCU GPIO pin limit (20 mA20\text{ mA}). Use an NPN pre-driver transistor (such as 2N3904 or BC337).
  • Omitting heatsink under continuous load: At 2A2\text{A} output current, VCE(sat)V_{CE(sat)} power dissipation reaches 2.4 Watts\sim 2.4\text{ Watts}. A heatsink is necessary to avoid thermal damage.

Notes

  • TIP32 vs TIP32A vs TIP32B vs TIP32C: TIP32 (-40V), TIP32A (-60V), TIP32B (-80V), TIP32C (-100V). The "C" suffix version is the most common because it handles higher DC supply voltages.

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