Overview

The BD136 is a classic medium-power complementary silicon PNP bipolar junction transistor manufactured by STMicroelectronics, onsemi, and NXP. Housed in a through-hole TO-126 (SOT-32) plastic package with a central mounting hole, it provides a rugged, heatsinkable alternative to small-signal PNP transistors.

Featuring a collector-emitter voltage (VCEOV_{CEO}) rating of 45V-45\text{V}, a continuous collector current rating of 1.5A-1.5\text{A} (3.0A-3.0\text{A} pulsed peak), a transition frequency (fTf_T) of 190 MHz190\text{ MHz}, and up to 12.5 Watts12.5\text{ Watts} of power dissipation when mounted to a heatsink, the BD136 is the official PNP complement to the BD135. It is widely used in complementary audio amplifier pre-driver and driver stages, high-side DC motor speed controllers, relay and solenoid switching, and linear power supply series-pass regulators.

Quick reference

Transistor TypeMedium-Power Complementary Silicon PNP BJT
PackageTO-126 / SOT-32 (3-pin through-hole with mounting hole)
Collector-Emitter Breakdown (VCEOV_{CEO})45 V-45\text{ V} max
Collector-Base Breakdown (VCBOV_{CBO})45 V-45\text{ V} max
Continuous Collector Current (ICI_C)1.5 A-1.5\text{ A} max (3.0 A-3.0\text{ A} peak pulse)
Base Current (IBI_B)0.5 A-0.5\text{ A} max
DC Current Gain (hFEh_{FE})4040 to 250250 (BD136-10: 63–160, BD136-16: 100–250)
Transition Frequency (fTf_T)190 MHz190\text{ MHz} typ (>50 MHz> 50\text{ MHz} min)
Power Dissipation (PDP_D)12.5 Watts12.5\text{ Watts} (TC=25CT_C = 25^\circ\text{C} with heatsink) / 1.25 W1.25\text{ W} in free air
Complementary NPN PairBD135 (45V NPN)

Pinout (TO-126 / SOT-32 Package - E-C-B Standard)

Looking at the printed front face of the TO-126 package with leads pointing downward:

text
        ┌───────────────┐
        │   O [Mount]   │
        ├───────────────┤
        │     BD136     │
        └─┬─────┬─────┬─┘
          1     2     3
          E     C     B
PinNameTypeDescription
1EMITTER (E)Emitter TerminalEmitter (Connect to positive supply rail or emitter resistor)
2COLLECTOR (C)Collector TerminalCollector (Connected to switched load; internally bonded to rear metal tab)
3BASE (B)Base TerminalBase control input (Driven with base current via series resistor or input stage)

Specifications

ParameterSymbolMinTypMaxUnitConditions
Collector-Emitter BreakdownV(BR)CEOV_{(BR)CEO}-45VIC=10mA,IB=0I_C = -10\text{mA}, I_B = 0
Collector-Base BreakdownV(BR)CBOV_{(BR)CBO}-45VIC=100 μA,IE=0I_C = -100\ \mu\text{A}, I_E = 0
Emitter-Base BreakdownV(BR)EBOV_{(BR)EBO}-5.0VIE=10 μA,IC=0I_E = -10\ \mu\text{A}, I_C = 0
Collector Cutoff CurrentICBOI_{CBO}-100nAVCB=30V,IE=0V_{CB} = -30\text{V}, I_E = 0
DC Current Gain (hFEh_{FE})hFEh_{FE}40250IC=150mA,VCE=2.0VI_C = -150\text{mA}, V_{CE} = -2.0\text{V}
DC Current Gain (hFEh_{FE})hFEh_{FE}25IC=500mA,VCE=2.0VI_C = -500\text{mA}, V_{CE} = -2.0\text{V}
Collector Saturation VoltageVCE(sat)V_{CE(sat)}-0.50VIC=500mA,IB=50mAI_C = -500\text{mA}, I_B = -50\text{mA}
Base Saturation VoltageVBE(sat)V_{BE(sat)}-1.00VIC=500mA,IB=50mAI_C = -500\text{mA}, I_B = -50\text{mA}

Comparison: BD136 vs BD138 vs BD140

ParameterBD136BD138BD140
VCEOV_{CEO} Voltage45 V-45\text{ V}60 V-60\text{ V}80 V-80\text{ V}
Max Current (ICI_C)1.5 A-1.5\text{ A}1.5 A-1.5\text{ A}1.5 A-1.5\text{ A}
Transition Freq (fTf_T)190 MHz190\text{ MHz}190 MHz190\text{ MHz}190 MHz190\text{ MHz}
Complementary NPNBD135BD137BD139

Common mistakes

  • Assuming TO-92 (E-B-C) pinout: The TO-126 BD136 uses the European standard Emitter - Collector - Base (E-C-B) sequence from left to right. Swapping the base and collector leads is the most common assembly error.
  • Mounting to a heatsink without electrical insulation: The metal rear backing tab is internally bonded to Pin 2 (Collector). When mounting to a grounded chassis or shared heatsink, use a silicone thermal pad and insulating bushing.

Notes

  • Gain Grouping: Sub-grades are marked on the package: -6 (hFE=40100h_{FE} = 40 \dots 100), -10 (hFE=63160h_{FE} = 63 \dots 160), and -16 (hFE=100250h_{FE} = 100 \dots 250).

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