Overview

The 2N2907 (2N2907A / PN2907A) is a high-speed PNP general-purpose bipolar junction transistor (BJT) manufactured by ON Semiconductor, Microchip, and STMicroelectronics. It is the direct PNP complementary transistor to the iconic 2N2222 NPN transistor.

Enclosed in a TO-92 plastic package (PN2907), TO-18 metal can (2N2907), or SOT-23 SMD package (MMBT2907), it handles collector-emitter voltages up to −60 Volts-60\text{ Volts} and continuous collector currents up to −600 mA-600\text{ mA} (with peak currents up to −1.0 A-1.0\text{ A}). It is widely used for high-side power switching, LED drivers, push-pull audio stages, and core memory logic.

Quick reference

Transistor TypePNP Bipolar Junction Transistor (BJT)
PackageTO-92 (PN2907A) / TO-18 (2N2907A) / SOT-23 (MMBT2907A)
Collector-Emitter Voltage (VCEOV_{CEO})−60 V-60\text{ V} max
Collector-Base Voltage (VCBOV_{CBO})−60 V-60\text{ V} max
Continuous Collector Current (ICI_C)−600 mA-600\text{ mA} continuous (−1000 mA-1000\text{ mA} peak)
DC Current Gain (hFEh_{FE})100 to 300 (at IC=−150mA,VCE=−10VI_C = -150\text{mA}, V_{CE} = -10\text{V})
Transition Frequency (fTf_T)200 MHz200\text{ MHz} min (300 MHz300\text{ MHz} typical)
Power Dissipation (PDP_D)625 mW625\text{ mW} (TA=25∘CT_A = 25^\circ\text{C}, TO-92)

Pinout (TO-92 Package — PN2907A)

Looking at the flat face of the TO-92 package with leads pointing down:

text
        ┌─────────────┐
        │   PN2907A   │  (Flat Package Face)
        └─┬───┬───┬───┘
          1   2   3
          E   B   C
PinNameDescription
1EMITTER (E)Emitter terminal (High-side power rail +VCC+V_{CC})
2BASE (B)Base terminal (Active LOW control input via base resistor)
3COLLECTOR (C)Collector terminal (Output to load)

Specifications

ParameterSymbolMinTypMaxUnitConditions
Collector-Emitter BreakdownV(BR)CEOV_{(BR)CEO}-60——VIC=−10mA,IB=0I_C = -10\text{mA}, I_B = 0
DC Current GainhFEh_{FE}100—300—VCE=−10V,IC=−150mAV_{CE} = -10\text{V}, I_C = -150\text{mA}
DC Current Gain (High ICI_C)hFEh_{FE}50———VCE=−10V,IC=−500mAV_{CE} = -10\text{V}, I_C = -500\text{mA}
Collector Saturation VoltsVCE(sat)V_{CE(sat)}—-200-400mVIC=−150mA,IB=−15mAI_C = -150\text{mA}, I_B = -15\text{mA}
Base Saturation VoltageVBE(sat)V_{BE(sat)}—-900-1300mVIC=−150mA,IB=−15mAI_C = -150\text{mA}, I_B = -15\text{mA}

Common mistakes

  • Using PNP as low-side switch: PNP transistors are designed for high-side switching (Emitter connected to +VCC+V_{CC}, Collector connected to Load). When using a PNP as a high-side switch with a +12V+12\text{V} power rail, a 3.3V3.3\text{V} or 5V5\text{V} MCU pin cannot turn the transistor OFF because VBEV_{BE} remains 12V−5V=7V>0.7V12\text{V} - 5\text{V} = 7\text{V} > 0.7\text{V}. Use an NPN pre-driver transistor.

Notes

  • 2N2907 vs 2N2222: 2N2907 is PNP (high-side switch); 2N2222 is NPN (low-side switch). They are designed as complementary pairs for push-pull output stages.

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