Overview

The NCP1400ASN33T1 (NCP1400A 3.3V) is a miniature micropower step-up (boost) DC-DC converter manufactured by onsemi. Housed in a compact 5-pin surface-mount TSOP-5 (SOT-23-5) package, it provides a regulated +3.3V+3.3\text{V} DC rail at up to 100 mA100\text{ mA} from low-voltage single-cell power sources.

Featuring an ultra-low startup voltage of just 0.8V0.8\text{V} (operating down to 0.2V0.2\text{V} once started), an idle quiescent current of only 19 μA19\ \mu\text{A}, and a pulse-frequency modulation (PFM) architecture switching up to 180 kHz180\text{ kHz}, the NCP1400A requires only three external components: a miniature inductor, a Schottky diode, and input/output ceramic capacitors. It is widely used in wearable electronics, wireless sensors, electronic badges, and battery-powered gadgets running microcontrollers (such as ATtiny, PIC, or MSP430) from a single 1.5V1.5\text{V} AA/AAA alkaline battery, 1.2V1.2\text{V} NiMH cell, or 3.0V3.0\text{V} CR2032 coin cell.

Quick reference

Converter TopologyMicropower PFM Step-Up (Boost) DC-DC Converter
PackageTSOP-5 (5-pin SMD / SOT-23-5)
Output Voltage (VOUTV_{OUT})+3.3 V+3.3\text{ V} DC fixed (±2.5%\pm 2.5\%)
Startup Input Voltage (VSTARTV_{START})0.8 V0.8\text{ V} typical (0.9 V0.9\text{ V} max)
Operating Input Range (VINV_{IN})0.8 V0.8\text{ V} to 3.3 V3.3\text{ V} DC (6.0 V6.0\text{ V} absolute max)
Output Current (IOUTI_{OUT})Up to 100 mA100\text{ mA} (VIN=1.5V,VOUT=3.3VV_{IN} = 1.5\text{V}, V_{OUT} = 3.3\text{V})
Quiescent Current (IQI_Q)19 μA19\ \mu\text{A} typical (No load) / <0.1 μA< 0.1\ \mu\text{A} in shutdown
Switching FrequencyUp to 180 kHz180\text{ kHz} (PFM architecture)
Peak EfficiencyUp to 82%82\%
Shutdown ControlActive-HIGH Chip Enable (CE) pin

Pinout (TSOP-5 / SOT-23-5 Package)

text
        ┌───┬───┐
      1 │   │ 5 │ LX (Inductor Switching Node)
     CE │   └───┤
    OUT │ 2   4 │ GND (0V)
     NC │ 3     │
        └───┴───┘
PinNameTypeDescription
1CEControl InputChip Enable (Active HIGH; tie to VINV_{IN} to enable, pull LOW for <0.1 μA< 0.1\ \mu\text{A} shutdown)
2OUTPower Output / FeedbackOutput voltage sense and internal bias supply (+3.3 V+3.3\text{ V})
3NCNo ConnectLeave unconnected or solder to ground plane
4GNDGroundCommon system ground reference (0 V0\text{ V})
5LXSwitching NodeDrain of internal N-channel power MOSFET (Connect to inductor and Schottky diode anode)

Specifications

ParameterSymbolMinTypMaxUnitConditions
Output VoltageVOUTV_{OUT}3.2183.3003.382VIO=10mA,VIN=1.5VI_O = 10\text{mA}, V_{IN} = 1.5\text{V}
Minimum Startup VoltageVSTARTV_{START}0.80.9VIO=1.0mAI_O = 1.0\text{mA}
Operating Voltage (Post Start)VHOLDV_{HOLD}0.20.6VIO=1.0mAI_O = 1.0\text{mA}
Quiescent CurrentIQI_Q19.035.0µAIO=0mA,VIN=1.5VI_O = 0\text{mA}, V_{IN} = 1.5\text{V}
Shutdown CurrentISDI_{SD}0.10.6µAVCE=0V,VIN=1.5VV_{CE} = 0\text{V}, V_{IN} = 1.5\text{V}
Max Switching FrequencyfOSCf_{OSC}140180220kHzVOUT=3.3VV_{OUT} = 3.3\text{V}
Internal Switch LimitILIMI_{LIM}350mAPeak inductor current

Typical Application Circuit

text
  Single Alkaline / NiMH Cell (0.9V - 1.5V)

           ├───[ C_IN: 10µF Ceramic / Tantalum ]──┐
           │                                      │
           ├───[ L1: 47µH Inductor (CD54/0630) ]──┼───────────┐
           │                                      │           │
           │                                  [Pin 4: GND]    │
           │                                      │           │
       [Pin 1: CE]                                │       [Pin 5: LX]
         NCP1400A                                 │           │
       [Pin 2: OUT] ──────────────┬───────────────┴─── GND    │
           │                      │                           │
           │            [ D1: MBR0520LT1 Schottky ] ──────────┘
           │                      │ (Cathode to OUT)
           ├───[ C_OUT: 22µF Low-ESR Ceramic / Tantalum ]── GND

  Regulated +3.3V DC (Up to 100mA for Microcontroller & Radio)
  1. Inductor (L1L_1): 22 μH22\ \mu\text{H} to 47 μH47\ \mu\text{H} shielded power inductor with saturation current ISAT500 mAI_{SAT} \ge 500\text{ mA} and low DC resistance (e.g. Sumida CD43 / CD54).
  2. Schottky Diode (D1D_1): Low forward drop Schottky diode (e.g. MBR0520L, 1N5819HW, BAT54).
  3. Output Capacitor (COUTC_{OUT}): 10 μF22 μF10\ \mu\text{F} \dots 22\ \mu\text{F} low-ESR X5R/X7R ceramic or tantalum capacitor placed directly adjacent to Pins 2 and 4.

Common mistakes

  • Using a standard PN junction diode instead of Schottky: Standard silicon diodes (e.g. 1N4148, 1N4007) have a 0.7V1.0V0.7\text{V} \dots 1.0\text{V} forward drop, severely cutting efficiency and preventing the circuit from boosting under load. Always use a Schottky diode with VF<0.35VV_F < 0.35\text{V}.
  • Input voltage exceeding output voltage: In boost topology, current flows directly from input through inductor and diode to output. If VIN>VOUTV_{IN} > V_{OUT} (e.g. connecting a 4.2V LiPo battery to a 3.3V NCP1400A), the output voltage will rise uncontrollably to VINVDIODEV_{IN} - V_{DIODE}.

Notes

  • Suffix Guide: ASN33 designates +3.3V+3.3\text{V} fixed output; ASN50 designates +5.0V+5.0\text{V} fixed output; T1G denotes RoHS lead-free tape & reel packaging.

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