Overview

The IR2110 (and lead-free IR2110PBF / IRS2110PBF) is the industry-standard high-voltage, high-speed power MOSFET and IGBT half-bridge driver IC originally pioneered by International Rectifier (now Infineon Technologies). Packaged in a 14-pin PDIP or 16-pin wide SOIC, it features independent high- and low-side referenced output channels capable of driving half-bridges up to $+500\text{V}$ with $2.0\text{A}$ peak sourcing and $2.0\text{A}$ peak sinking drive capability.

A key design feature of the IR2110 is its separate logic supply rail (VDD) and separate logic ground (VSS), allowing the IC's input stages to interface seamlessly with $3.3\text{V}$ and $5\text{V}$ CMOS or LSTTL microcontrollers while output gate stages switch between $10\text{V}$ and $20\text{V}$. Propagation delays are matched down to $10\text{ ns}$, making the IR2110 the classic driver of choice for induction heaters, Tesla coils, full-bridge DC-DC converters, motor inverters, and switch-mode audio amplifiers.

Quick reference

Pin Configuration (14-Pin PDIP Package)

         ┌──────────────┐
     LO ─│ 1         14 │─ NC
    COM ─│ 2         13 │─ VSS
    VCC ─│ 3         12 │─ LIN
     NC ─│ 4  IR     11 │─ SD
     VS ─│ 5  2110   10 │─ HIN
     VB ─│ 6          9 │─ VDD
     HO ─│ 7          8 │─ NC
         └──────────────┘

Control Logic Truth Table

Inputs HIN and LIN operate independently:

Standard Application Circuit

                      +V_BUS High Voltage (Up to 500V DC)
                         │
                         ├───────────┐ [D_BOOT Ultra-Fast]
                         │           │
                         │          ┌┴┐
                         │          │▲│
                         │          └┬┘
                         │           │
                     [Pin 3: VCC]    │
                       IR2110        │
                     [Pin 6: VB] ────┴──────┐
                         │                  │
                     [Pin 7: HO] ─[R_G1]─┐ [C_BOOT 0.1µF-1.0µF]
                         │               │  │
                         │             ┌─┴──┴─┐  [Q1 High-Side N-MOSFET]
                     [Pin 5: VS] ──────┤  S   │
                         │             └──┬───┘
                         │                ├──────────── Half-Bridge Output
                         │                │
                     [Pin 1: LO] ─[R_G2]─┐│
                         │               ││
                         │             ┌─┴┴───┐  [Q2 Low-Side N-MOSFET]
                     [Pin 2: COM] ─────┤  S   │
                         │             └──┬───┘
                        GND               │
                                         GND

Specifications

Common mistakes

• Leaving VDD floating or tying to 12V with 3.3V/5V MCU: Pin 9 (VDD) powers the logic threshold comparators. Connect VDD directly to your MCU's supply ($3.3\text{V}$ or $5.0\text{V}$). Tying VDD to $12\text{V}$ or $15\text{V}$ sets the logic HIGH threshold to $9.5\text{V}$, preventing $3.3\text{V}$ microcontrollers from triggering the inputs.
• Leaving SD floating: Pin 11 (SD) has an internal pull-down resistor, but in high-noise environments (motor switching), noise pickup can trigger spurious shutdowns. Tie SD directly to VSS (Ground) if unused.
• Undersized bootstrap capacitor for low switching frequencies: At frequencies below $10\text{ kHz}$, the gate charge of large power MOSFETs will deplete a small $100\text{ nF}$ capacitor. Use a $1.0\ \mu\text{F} \dots 4.7\ \mu\text{F}$ low-ESR ceramic capacitor for low-frequency PWM.

Notes

• High-Voltage Variant (IR2113): The IR2113 is the $600\text{V}$ rated identical drop-in companion to the $500\text{V}$ rated IR2110.