Overview

The IR2103 (and its modern lead-free counterpart IRS2103PBF / IRS2103STRPBF) is a high-voltage, high-speed half-bridge power MOSFET and IGBT gate driver IC manufactured by Infineon Technologies (originally International Rectifier). It provides independent high- and low-side referenced output channels designed to drive two N-channel power MOSFETs or IGBTs in half-bridge, synchronous buck, full-bridge inverter, and BLDC motor drive topologies.

The high-side driver features a floating bootstrap channel capable of operating up to +600V+600\text{V} relative to ground (COMCOM), with high immune dV/dtdV/dt noise tolerance (50 V/ns50\text{ V/ns}). The IC incorporates internal cross-conduction prevention logic and matched propagation delays (520 ns520\text{ ns} typical internal deadtime) to prevent catastrophic shoot-through current during switching.

Quick reference

Driver TypeHigh and Low Side Half-Bridge Gate Driver IC
Package8-lead PDIP (IR2103) / 8-lead SOIC (IR2103S)
High-Side Floating Offset (VSV_S)Up to +600 V+600\text{ V} DC max
Gate Driver Supply Range (VCCV_{CC})10.0 V10.0\text{ V} to 20.0 V20.0\text{ V} DC
Output Peak Current+130 mA+130\text{ mA} Source / 270 mA-270\text{ mA} Sink typical (+210 mA/360 mA+210\text{ mA} / -360\text{ mA} test)
Internal Deadtime520 ns520\text{ ns} typical (prevents shoot-through)
Turn-On / Turn-Off Delayton=680 nst_{on} = 680\text{ ns} / toff=150 nst_{off} = 150\text{ ns} typical
Logic Compatibility3.3 V3.3\text{ V}, 5.0 V5.0\text{ V}, and 15.0 V15.0\text{ V} CMOS / LSTTL inputs
Low-Side Input PolarityInverted active-LOW (LIN=LOW\overline{LIN} = \text{LOW} turns LO\text{LO} ON)

Pinout (DIP-8 / SOIC-8 Package)

text
        ┌──────────────┐
    VCC ─│ 1          8 │─ VB
    HIN ─│ 2          7 │─ HO
  ~LIN~ ─│ 3          6 │─ VS
    COM ─│ 4          5 │─ LO
        └──────────────┘
PinNameDescription
1VCCLow-side fixed supply voltage and logic supply input (+10V to +20V DC)
2HINLogic input for high-side gate driver output (In-phase with HO)
3~LIN~Logic input for low-side gate driver output (Out-of-phase: active-LOW with LO)
4COMLogic and low-side power ground return
5LOLow-side gate drive output
6VSHigh-side floating supply return (Half-bridge switching node / MOSFET source)
7HOHigh-side gate drive output
8VBHigh-side floating bootstrap supply voltage pin

Input / Output Logic Truth Table

The low-side input (~LIN~) is active-LOW, making complementary driving with a single MCU PWM pin straightforward:

HIN~LIN~HO (High-Side Gate)LO (Low-Side Gate)Bridge State
Low (0)High (1)Low (OFF)Low (OFF)Both MOSFETs OFF (High-Z midpoint)
High (1)High (1)High (ON)Low (OFF)High-Side ON (Midpoint pulled to high voltage rail)
Low (0)Low (0)Low (OFF)High (ON)Low-Side ON (Midpoint pulled to GND)
High (1)Low (0)Low (OFF)Low (OFF)Shoot-through prevention (Both outputs forced OFF)

Standard Half-Bridge Application Circuit

text
                      +V_BUS High Voltage (Up to 600V DC)

                         ├───────────┐ [D_BOOT Ultra-Fast]
                         │           │
                         │          ┌┴┐
                         │          │▲│
                         │          └┬┘
                         │           │
                     [Pin 1: VCC]    │
                       IR2103        │
                     [Pin 8: VB] ────┴──────┐
                         │                  │
                     [Pin 7: HO] ─[R_G1]─┐ [C_BOOT 0.1µF-1.0µF]
                         │               │  │
                         │             ┌─┴──┴─┐  [Q1 High-Side N-MOSFET]
                     [Pin 6: VS] ──────┤  S   │
                         │             └──┬───┘
                         │                ├──────────── Output / Motor / Inductor
                         │                │
                     [Pin 5: LO] ─[R_G2]─┐│
                         │               ││
                         │             ┌─┴┴───┐  [Q2 Low-Side N-MOSFET]
                     [Pin 4: COM] ─────┤  S   │
                         │             └──┬───┘
                        GND               │
                                         GND
  • Bootstrap Diode (DBOOTD_{BOOT}): Must be an ultra-fast recovery diode (such as UF4007 or ES1J) rated for the full high-voltage bus (VBUS+20%V_{BUS} + 20\%).
  • Bootstrap Capacitor (CBOOTC_{BOOT}): Low-ESR ceramic capacitor (0.1 μF1.0 μF0.1\ \mu\text{F} \dots 1.0\ \mu\text{F}, 25V\ge 25\text{V}) charged when LO is active and VSV_S is pulled to ground.

Specifications

ParameterSymbolMinTypMaxUnitConditions
High-Side Floating Supply VoltageVBV_B-0.3625VRelative to COM
High-Side Floating Offset VoltageVSV_SVB25V_B - 25VB+0.3V_B + 0.3VSwitching node
Low-Side Supply VoltageVCCV_{CC}10.020.0VOperating range
Logic High Input ThresholdVIHV_{IH}2.7VVCC=10V20VV_{CC} = 10\text{V} \dots 20\text{V}
Logic Low Input ThresholdVILV_{IL}0.8VVCC=10V20VV_{CC} = 10\text{V} \dots 20\text{V}
Output High Short-Circuit CurrentIO+I_{O+}130210mAVO=0V,VIN=High,PW10 μsV_O = 0\text{V}, V_{IN} = \text{High}, PW \le 10\ \mu\text{s}
Output Low Short-Circuit CurrentIOI_{O-}270360mAVO=15V,VIN=Low,PW10 μsV_O = 15\text{V}, V_{IN} = \text{Low}, PW \le 10\ \mu\text{s}
Turn-On Propagation Delaytont_{on}680820nsVS=0VV_S = 0\text{V}
Turn-Off Propagation Delaytofft_{off}150220nsVS=600VV_S = 600\text{V}
DeadtimeDTDT400520650nsInternal matched delay

Common mistakes

  • Forgetting that ~LIN~ is inverted: Unlike drivers with active-high inputs on both channels (like IR2101), the IR2103 requires ~LIN~ to be driven LOW to turn on the low-side gate (LO). If connected to a standard active-high MCU pin without inverting logic, the low-side switch will remain continuously ON.
  • Operating at 100% High-Side Duty Cycle: The floating bootstrap capacitor (CBOOTC_{BOOT}) charges only when the switching node (VSV_S) is grounded by the low-side MOSFET. Continuous DC high-side conduction without periodic low-side switching causes the bootstrap capacitor to discharge, causing high-side gate drive failure via undervoltage lockout.
  • Using a standard rectifier diode for bootstrap: A slow 1N4007 diode cannot reverse-recover fast enough during high-frequency switching (>20 kHz> 20\text{ kHz}), leading to massive reverse recovery current into the VCCV_{CC} rail and diode destruction. Always use an ultra-fast recovery diode (trr<75 nst_{rr} < 75\text{ ns}) like UF4007 or MUR120.
  • Negative voltage transients on VS: Inductive switching can pull VSV_S below COMCOM ground (<5V< -5\text{V}), which can latch up the internal CMOS substrate. Add a low-forward-drop Schottky diode from COMCOM to VSV_S and a small resistor (3 Ω10 Ω3\ \Omega \dots 10\ \Omega) in series with VSV_S.

Notes

  • Drop-in Sibling (IR2104): The IR2104 uses the same 8-pin package but features a single input (IN) and an active-low shutdown (~SD~) pin instead of split HIN / ~LIN~ inputs.

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