Overview

The LF356 (LF356N / LF356M) is an iconic monolithic JFET-input operational amplifier developed by National Semiconductor (now Texas Instruments). As the wide-bandwidth, fast-settling flagship of the pioneering BI-FET™ technology series, it integrates high-voltage JFETs on the same die with standard bipolar transistors to achieve low input bias currents (30 pA30\text{ pA} typical) without sacrificing high-frequency response.

With a 5.0 MHz5.0\text{ MHz} gain bandwidth product, a slew rate of 12.0 V/μs12.0\text{ V/}\mu\text{s}, and an ultra-fast settling time of 1.5 μs1.5\ \mu\text{s} to 0.01%0.01\%, the LF356 has maintained a loyal following for decades in modular synthesizer circuits (analog VCOs, VCFs, and envelope generators), precision sample-and-hold amplifiers, logarithmic amplifiers, high-impedance electrometers, and DAC current-to-voltage converters.

Quick reference

Amplifier TypeMonolithic BI-FET™ JFET-Input Operational Amplifier
Package8-pin PDIP (LF356N) / 8-pin SOIC (LF356M) / TO-99 Metal Can
Gain Bandwidth Product5.0 MHz5.0\text{ MHz} typical
Slew Rate12.0 V/μs12.0\text{ V/}\mu\text{s} typical (7.5 V/μs7.5\text{ V/}\mu\text{s} minimum)
Settling Time (to 0.01%)1.5 μs1.5\ \mu\text{s} (10V10\text{V} step)
Input Bias Current (IBI_B)30 pA30\text{ pA} typical / 200 pA200\text{ pA} maximum (TA=25CT_A = 25^\circ\text{C})
Input Voltage Noise (ene_n)12 nV/Hz12\text{ nV}/\sqrt{\text{Hz}} at 1 kHz1\text{ kHz}
Supply Voltage Range±5.0 V\pm 5.0\text{ V} to ±18.0 V\pm 18.0\text{ V} split (or +10V+10\text{V} to +36V+36\text{V} single)
Supply Current5.0 mA5.0\text{ mA} typical / 10.0 mA10.0\text{ mA} maximum

Pinout (DIP-8 / SOIC-8 Package)

text
        ┌──────────────┐
  BAL1  ─│ 1          8 │─ NC
   IN-  ─│ 2   LF     7 │─ V+
   IN+  ─│ 3   356    6 │─ OUT
    V-  ─│ 4          5 │─ BAL2
        └──────────────┘
PinNameDescription
1BAL1Offset balance terminal 1 (Connect 25 kΩ25\text{ k}\Omega trim pot wiper to V-)
2IN-Inverting analog input (JFET high-impedance gate)
3IN+Non-inverting analog input (JFET high-impedance gate)
4V-Negative power supply rail (5V-5\text{V} to 18V-18\text{V} or GND)
5BAL2Offset balance terminal 2
6OUTAnalog operational amplifier output
7V+Positive power supply rail (+5V+5\text{V} to +18V+18\text{V})
8NCNo internal connection

Specifications

ParameterSymbolMinTypMaxUnitConditions
Slew RateSRSR7.512.0V/μs\text{V/}\mu\text{s}VS=±15V,AV=1V_S = \pm 15\text{V}, A_V = 1
Small-Signal BandwidthGBWGBW5.0MHzVS=±15V,TA=25CV_S = \pm 15\text{V}, T_A = 25^\circ\text{C}
Settling Time to 0.01%tst_s1.5μs\mu\text{s}10V10\text{V} step, AV=1A_V = -1
Input Offset VoltageVOSV_{OS}3.010.0mVRS10 kΩR_S \le 10\text{ k}\Omega
Input Bias CurrentIBI_B30200pATA=25CT_A = 25^\circ\text{C}
Equivalent Input Noiseene_n1215nV/Hz\text{nV}/\sqrt{\text{Hz}}f=1 kHzf = 1\text{ kHz}
Common-Mode Rejection RatioCMRRCMRR80100dBVCM=±10VV_{CM} = \pm 10\text{V}
Supply CurrentICCI_{CC}5.010.0mAVS=±15VV_S = \pm 15\text{V}

Common mistakes

  • JFET Input Phase Reversal: When input voltages approach the negative supply rail (VV_-), internal JFET drains can become forward-biased, inverting the output phase. In analog synth integrators and buffer circuits, clamp inputs with Schottky diodes or ensure signal swings remain within ±11V\pm 11\text{V} on ±15V\pm 15\text{V} rails.
  • Overlooking power dissipation: Drawing 5 mA8 mA5\text{ mA} \dots 8\text{ mA} quiescent current on ±15V\pm 15\text{V} supplies means the package dissipates 200 mW\approx 200\text{ mW} statically, causing the package to feel noticeably warm to the touch. This self-heating increases input bias current slightly.
  • Grounding the offset balance pins: Pins 1 and 5 are internal balance nodes. Grounding them unbalances the internal differential stage. Leave unconnected unless actively trimming offset with a 25 kΩ25\text{ k}\Omega potentiometer tied to Pin 4 (VV_-).

Notes

  • BI-FET Series Family:
    • LF355: Low supply current (2.0 mA2.0\text{ mA}), 2.5 MHz2.5\text{ MHz} bandwidth.
    • LF356: Wide bandwidth (5.0 MHz5.0\text{ MHz}), fast settling (1.5 μs1.5\ \mu\text{s}), 5.0 mA5.0\text{ mA} supply current.
    • LF357: Decompensated high-gain wideband version (20 MHz20\text{ MHz}, 50 V/μs50\text{ V/}\mu\text{s}, stable for AV5A_V \ge 5).

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